BYT54A, BYT54B, BYT54D, BYT54G, BYT54J, BYT54K, BYT54M www.vishay.com Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 949539 APPLICATIONS MECHANICAL DATA Very fast rectification and switching diodes Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYT54M BYT54M-TR 5000 per 10 tape and reel 25 000 BYT54M BYT54M-TAP 5000 per ammopack 25 000 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYT54A V = 50 V I = 1.25 A SOD-57 R F(AV) BYT54B V = 100 V I = 1.25 A SOD-57 R F(AV) BYT54D V = 200 V I = 1.25 A SOD-57 R F(AV) BYT54G V = 400 V I = 1.25 A SOD-57 R F(AV) BYT54J V = 600 V I = 1.25 A SOD-57 R F(AV) BYT54K V = 800 V I = 1.25 A SOD-57 R F(AV) BYT54M V = 1000 V I = 1.25 A SOD-57 R F(AV) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BYT54A V = V 50 V R RRM BYT54B V = V 100 V R RRM BYT54D V = V 200 V R RRM Reverse voltage = repetitive peak reverse See electrical characteristics BYT54G V = V 400 V R RRM voltage BYT54J V = V 600 V R RRM BYT54K V = V 800 V R RRM BYT54M V = V 1000 V R RRM Peak forward surge current t = 10 ms, half sine wave I 30 A p FSM On PC board I 0.75 A F(AV) Average forward current l = 10 mm I 1.25 A F(AV) BYT54J E 10 mJ R Non repetitive reverse avalanche energy I = 0.4 A BYT54K E 10 mJ (BR)R R BYT54M E 10 mJ R Junction and storage temperature range T = T - 55 to + 175 C j stg Rev. 1.8, 11-Sep-12 Document Number: 86031 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BYT54A, BYT54B, BYT54D, BYT54G, BYT54J, BYT54K, BYT54M www.vishay.com Vishay Semiconductors MAXIMUM THERMAL RESISTANCE (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, T = constant R 45 K/W L thJA Junction ambient On PC board with spacing 25 mm R 100 K/W thJA ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb SYMBO PARAMETER TEST CONDITION PART MIN. TYP. MAX. UNIT L Forward voltage I = 1 A V -- 1.5 V F F V = V I -- 5 A R RRM R Reverse current V = V , T = 150 C I - - 150 A R RRM j R Reverse recovery time I = 0.5 A, I = 1 A, i = 0.25 A t - - 100 ns F R R rr TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1.4 120 V = V R RRM half sinewave 1.2 100 1.0 R = 45 K/W thJA 80 I = 10 mm 0.8 60 ll 0.6 R = 100 K/W thJA PCB: d = 25 mm 40 0.4 20 0.2 T = constant L 0 0 0 5 10 15 202530 0 20406080 100120140160180 949552 l - Lead Length (mm) 16339 T - Ambient Temperature (C) amb Fig. 1 - Max. Thermal Resistance vs. Lead Length Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 10 1000 V = V R RRM T = 175 C j 1 100 T = 25 C j 0.1 10 0.01 0.001 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25 50 75 100 125 150 175 16338 V - Forward Voltage (V) 16340 T - Junction Temperature (C) F j Fig. 2 - Forward Current vs. Forward Voltage Fig. 4 - Max. Reverse Current vs. Junction Temperature Rev. 1.8, 11-Sep-12 Document Number: 86031 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (A) R - Ther. Resist. Junction/Ambient (K/W) F thJA I - Reverse Current (A) I - Average Forward Current (A) R FAV