BYV12, BYV13, BYV14, BYV15, BYV16 www.vishay.com Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 949539 APPLICATIONS Fast rectification and switching diode for example for MECHANICAL DATA TV-line output circuits and switch mode power supply Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYV16 BYV16-TR 5000 per 10 tape and reel 25 000 BYV16 BYV16-TAP 5000 per ammopack 25 000 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYV12 V = 100 V I = 1.5 A SOD-57 R F(AV) BYV13 V = 400 V I = 1.5 A SOD-57 R F(AV) BYV14 V = 600 V I = 1.5 A SOD-57 R F(AV) BYV15 V = 800 V I = 1.5 A SOD-57 R F(AV) BYV16 V = 1000 V I = 1.5 A SOD-57 R F(AV) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BYV12 V = V 100 V R RRM BYV13 V = V 400 V R RRM Reverse voltage = repetitive peak reverse See electrical characteristics BYV14 V = V 600 V R RRM voltage BYV15 V = V 800 V R RRM BYV16 V = V 1000 V R RRM Peak forward surge current t = 10 ms, half sine wave I 40 A p FSM Repetitive peak forward current I 9A FRM Average forward current = 180 I 1.5 A F(AV) Non repetitive reverse avalanche energy I = 0.4 A E 10 mJ (BR)R R Junction and storage temperature range T = T - 55 to + 175 C j stg MAXIMUM THERMAL RESISTANCE (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, T = constant R 45 K/W L thJA Junction ambient On PC board with spacing 25 mm R 100 K/W thJA Rev. 1.8, 04-Sep-12 Document Number: 86039 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BYV12, BYV13, BYV14, BYV15, BYV16 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 1 A V -- 1.5 V F F V = V I -1 5 A R RRM R Reverse current V = V , T = 150 C I - 60 150 A R RRM j R Reverse recovery time I = 0.5 A, I = 1 A, i = 0.25 A t - - 300 ns F R R rr Reverse recovery charge I = 1 A, dI/dt = 5 A/s Q - - 200 nC F rr TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 120 10 ll 100 T = 175 C j 1 80 T = 25 C j T = constant L 60 0.1 40 0.01 20 0 0.001 0 5 10 15 202530 0 0.5 1.0 1.5 2.0 2.5 3.0 949101 l - Lead Length (mm) 16375 V - Forward Voltage (V) F Fig. 1 - Typ. Thermal Resistance vs. Lead Length Fig. 3 - Forward Current vs. Forward Voltage 240 1.6 V = V R = 100 K/W R RRM thJA 1.4 half sinewave 200 V RRM 1.2 160 R = 45 K/W BYV12 thJA 1.0 V R I = 10 mm BYV14 120 0.8 BYV16 0.6 80 R = 100 K/W thJA BYV13 BYV15 0.4 PCB: d = 25 mm 40 0.2 0 0 0 200 400 600 800 1000 0 20406080 100120140160180 949517 V , V - Rev./Rep. Peak Rev. Voltage (V) 16376 T - Ambient Temperature (C) R RRM amb Fig. 2 - Junction Temperature vs. Fig. 4 - Max. Average Forward Current vs. Ambient Temperature Reverse/Repetitive Peak Reverse Voltage Rev. 1.8, 04-Sep-12 Document Number: 86039 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 T - Junction Temperature (C) R - Ther. Resist. Junction/Ambient (K/W) j thJA I - Average Forward Current (A) I - Forward Current (A) FAV F
