BYV28-50, BYV28-100, BYV28-150, BYV28-200 www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES Controlled avalanche characteristic Low forward voltage Ultra fast recovery time Glass passivated junction Hermetically sealed package AEC-Q101 qualified 949588 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 MECHANICAL DATA Case: SOD-64 APPLICATIONS Terminals: plated axial leads, solderable per MIL-STD-750, Very fast rectification e.g. for switch mode power supply method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 858 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYV28-200 BYV28-200-TR 2500 per 10 tape and reel 12 500 BYV28-200 BYV28-200-TAP 2500 per ammopack 12 500 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYV28-50 V = 50 V I = 3.5 A SOD-64 R F(AV) BYV28-100 V = 100 V I = 3.5 A SOD-64 R F(AV) BYV28-150 V = 150 V I = 3.5 A SOD-64 R F(AV) BYV28-200 V = 200 V I = 3.5 A SOD-64 R F(AV) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BYV28-50 V = V 50 V R RRM BYV28-100 V = V 100 V Reverse voltage = repetitive peak reverse R RRM See electrical characteristics voltage BYV28-150 V = V 150 V R RRM BYV28-200 V = V 200 V R RRM BYV28-50 V 55 V RSM BYV28-100 V 110 V RSM Peak reverse voltage, non repetitive See electrical characteristics BYV28-150 V 165 V RSM BYV28-200 V 220 V RSM Peak forward surge current t = 10 ms, half sine wave I 90 A p FSM Repetitive peak forward current I 25 A FRM Average forward current I 3.5 A F(AV) Pulse energy in avalanche mode, non I = 1 A, Tj = 175 C E 20 mJ (BR)R R repetitive (inductive load switch off) Junction and storage temperature range T = T - 55 to + 175 C j stg MAXIMUM THERMAL RESISTANCE (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, T = constant R 25 K/W L thJA Junction ambient On PC board with spacing 25 mm R 70 K/W thJA Rev. 1.9. 02-May-16 Document Number: 86044 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BYV28-50, BYV28-100, BYV28-150, BYV28-200 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT I = 5 A V -- 1.1 V F F Forward voltage I = 5 A, T = 175 C V - - 0.89 V F j F V = V I -- 1 A R RRM R Reverse current V I - - 100 A RSM R V = V , T = 165 C I - - 150 A R RRM j R Reverse recovery time I = 0.5 A, I = 1 A, i = 0.25 A t - - 30 ns F R R rr TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 40 4.0 V = V R RRM 3.5 half sine wave R 25 K/W thJA 30 3.0 l = 10 mm 2.5 20 2.0 ll 1.5 10 1.0 R 70 K/W thJA PCB: d = 25 mm 0.5 T = constant L 0 0.0 0 20 40 60 80 100 120 140 160 180 0 5 10 15 202530 16454 T - Ambient Temperature (C) 949548 l - Lead Length (mm) amb Fig. 1 - Max. Thermal Resistance vs. Lead Length Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 100 1000 V = V R RRM 10 T = 175 C j 100 1 T = 25 C j 0.1 10 0.01 1 0.001 0.0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150 175 16455 16453 V - Forward Voltage (V) T - Junction Temperature (C) F j Fig. 2 - Forward Current vs. Forward Voltage Fig. 4 - Reverse Current vs. Junction Temperature Rev. 1.9. 02-May-16 Document Number: 86044 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (A) R - Ther. Resist. Junction/Ambient (K/W) F thJA I - Reverse Current (A) R I - Average Forward Current (A) FAV