BYV32-100-E3/45 Vishay

33 3 BYV32-xxx, BYVF32-xxx, BYVB32-xxx www.vishay.com Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier FEATURES TO-220AB ITO-220AB Power pack Glass passivated pellet chip junction Ultrafast recovery time Low switching losses, high efficiency Low forward voltage drop 3 High forward surge capability 3 2 2 1 Meets MSL level 1, per J-STD-020, LF maximum peak 1 BYV32 Series BYVF32 Series of 245 C (for TO-263AB package) PIN 1 PIN 2 PIN 1 PIN 2 Solder dip 275 C max. 10 s, per JESD 22-B106 CASE PIN 3 PIN 3 (for TO-220AB and ITO-220AB package) 2 D PAK (TO-263AB) AEC-Q101 qualified available K - Automotive ordering code: base P/NHE3 2 (for ITO-220AB and D PAK (TO-263AB package)) 2 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 1 BYVB32 Series PIN 1 K TYPICAL APPLICATIONS PIN 2 HEATSINK For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, DC/DC DESIGN SUPPORT TOOLS AVAILABLE converters, and other power switching application. 3D Models MECHANICAL DATA 2 Case: TO-220AB, ITO-220AB, D PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating PRIMARY CHARACTERISTICS Base P/N-E3 - RoHS-compliant, commercial grad e I 18 A F(AV) Base P/NHE3 X - RoHS-compliant and AEC-Q101 qualified ( X denotes revision code e.g. A, B,....) V 50 V to 200 V RRM Terminals: matte tin plated leads, solderable per I 150 A FSM J-STD-002 and JESD 22-B102 t 25 ns rr E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix V 0.85 V F meets JESD 201 class 2 whisker test T max. 150 C J Polarity: as marked 2 Package TO-220AB, ITO-220AB, D PAK (TO-263AB) Mounting Torque: 10 in-lbs max. Circuit configuration Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL BYV32-50 BYV32-100 BYV32-150 BYV32-200 UNIT Maximum repetitive peak reverse voltage V 50 100 150 200 V RRM Maximum RMS voltage V 35 70 105 140 V RMS Maximum DC blocking voltage V 50 100 150 200 V DC Maximum average forward rectified current at T = 125 C I 18 A C F(AV) Peak forward surge current 8.3 ms single half sine-wave I 150 A FSM superimposed on rated load per diode Operating storage and temperature range T , T -65 to +150 C J STG Isolation voltage (ITO-220AB only) V 1500 V AC from terminal to heatsink t = 1 min Revision: 05-Jun-2019 Document Number: 88558 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DD D BYV32-xxx, BYVF32-xxx, BYVB32-xxx www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER TEST CONDITIONS SYMBOL BYV32-50 BYV32-100 BYV32-150 BYV32-200 UNIT I = 20 A T = 25 C 1.15 F J Maximum instantaneous forward (1) V V F voltage per diode = 5.0 A T = 100 C 0.85 F J Maximum DC reverse current T = 25 C 10 J per diode I A R T = 100 C 600 at rated DC blocking voltage J Maximum reverse recovery time I = 1 A, V = 30 V F R t 25 ns rr per diode dI/dt = 100 A/s, I = 10 % I rr RM Typical junction capacitance 4.0 V, 1 MHz C 45 pF J per diode Note (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) C PARAMETER SYMBOL BYV BYVF BYVB UNIT Typical thermal resistance from junction to case per diode R 1.6 5.0 1.6 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB BYV32-200-E3/45 1.85 45 50/tube Tube ITO-220AB BYVF32-200-E3/45 1.97 45 50/tube Tube TO-263AB BYVB32-200-E3/45 1.35 45 50/tube Tube TO-263AB BYVB32-200-E3/81 1.35 81 800/reel Tape and reel (1) ITO-220AB BYVF32-200HE3 A/P 1.97 P 50/tube Tube (1) TO-263AB BYVB32-200HE3 A/P 1.35 P 50/tube Tube (1) TO-263AB BYVB32-200HE3 A/I 1.35 I 800/reel Tape and reel Note (1) AEC-Q101 qualified, available in ITO-220AB and TO-263AB package Revision: 05-Jun-2019 Document Number: 88558 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000