DSAI35-16A IXYS

DS 35 DSI 35 DSA 35 DSAI 35 V = 800-1800 V Rectifier Diode RRM I = 80 A F(RMS) Avalanche Diode I = 49 A F(AV)M DO-203 AB V V V Anode Cathode RSM (BR)min RRM C A V V V on stud on stud DS DSI DSA DSAI 900 - 800 DS 35-08A DSI 35-08A A C 1300 - 1200 DS 35-12A DSI 35-12A 1300 1300 1200 DSA 35-12A DSAI 35-12A 1700 1750 1600 DSA 35-16A DSAI 35-16A 1900 1950 1800 DSA 35-18A DSAI 35-18A 1/4-28UNF Only for Avalanche Diodes A = Anode C = Cathode Symbol Test Conditions Maximum Ratings I T = T 80 A F(RMS) VJ VJM I T = 100 C 180 sine 49 A Features F(AVM) case International standard package, P DSA(I) types, T = T , t = 10 s11kW RSM VJ VJM p JEDEC DO-203 AB (DO-5) Planar glassivated chips I T = 45 C t = 10 ms (50 Hz), sine 650 A FSM VJ V = 0 t = 8.3 ms (60 Hz), sine 690 A R Applications T = T t = 10 ms (50 Hz), sine 600 A VJ VJM High power rectifiers V = 0 t = 8.3 ms (60 Hz), sine 640 A R Field supply for DC motors 2 2 Power supplies I t T = 45 C t = 10 ms (50 Hz), sine 2100 A s VJ 2 V = 0 t = 8.3 ms (60 Hz), sine 2000 A s R Advantages 2 T = T t = 10 ms (50 Hz), sine 1800 A s VJ VJM Space and weight savings 2 V = 0 t = 8.3 ms (60 Hz), sine 1700 A s R Simple mounting T -40...+180 C Improved temperature and power VJ T 180 C cycling VJM T -40...+180 C Reduced protection circuits stg M Mounting torque 4.5-5.5 Nm d Dimensions in mm (1 mm = 0.0394 ) 40-49 lb.in. Weight 15 g Symbol Test Conditions Characteristic Values I T = T V = V 4mA R VJ VJM R RRM V I = 150 A T = 25 C 1.55 V F F VJ V For power-loss calculations only 0.85 V T0 r T = T 4.5 m T VJ VJM R DC current 1.05 K/W thJC R DC current 1.25 K/W thJH d Creepage distance on surface 4.05 mm S d Strike distance through air 3.9 mm A 2 a Max. allowable acceleration 100 m/s Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions 1 - 2 2000 IXYS All rights reservedDS 35 DSI 35 DSA 35 DSAI 35 250 1000 10000 50Hz, 80% V V = 0 V RRM R 2 8000 A 900A A s typ. lim. 200 800 6000 I F 2 700 I t I FSM 150 600 4000 T = 45C VJ T = 180C VJ 500 T = 25C VJ 100 400 T = 180C VJ 300 2000 T = 45C VJ 50 200 T = 180C 100 VJ 0 0 1000 -3 -2 -1 0 0.5 1.0 1.5 2.0 V 10 10 10 s 101123 4567 ms890 V t t F 2 Fig. 1 Forward characteristics Fig. 2 Surge overload current Fig. 3 I t versus time (1-10 ms) I : crest value, t: duration FSM 100 60 A W R : 50 thJA 80 1.5 K/W I F(AV)M P F 1.9 K/W 40 60 2.3 K/W 3.9 K/W 30 40 DC 20 180 sin 120 60 20 10 30 0 0 0 20406080 A 00 50 100 150 C 200 0 40 80 120 160 C 200 I T T amb case F(AV)M Fig. 4 Power dissipation versus forward current and ambient temperature Fig. 5 Max. forward current at case temperature 180 sine 2.0 K/W R for various conduction angles d: thJH 1.6 dR (K/W) thJH Z thJH DC 1.25 180 1.37 1.2 120 1.47 60 1.74 30 2.08 0.8 Constants for Z calculation: thJH 0.4 iR (K/W) t (s) thi i 1 0.10 0.0012 0.0 2 0.25 0.1181 -3 -2 -1 0 1 2 10 10 10 10 10 s 10 3 0.70 0.6540 t 4 0.20 2.0 Fig. 6 Transient thermal impedance junction to heatsink 2 - 2 2000 IXYS All rights reserved