BYW178 www.vishay.com Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Very fast reverse recovery time 949588 Material categorization: For definitions of compliance please see MECHANICAL DATA www.vishay.com/doc 99912 Case: SOD-64 APPLICATIONS Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Ultrafast rectification diode for switching mode power supplies Polarity: color band denotes cathode end Mounting position: any Weight: approx. 858 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYW178 BYW178-TR 2500 per 10 tape and reel 12 500 BYW178 BYW178-TAP 2500 per ammopack 12 500 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYW178 V = 800 V I = 3 A SOD-64 R F(AV) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT Reverse voltage = repetitive peak reverse See electrical characteristics BYW178 V = V 800 V R RRM voltage Peak forward surge current t = 10 ms, half sine wave I 80 p FSM Repetitive peak forward current I 15 A FRM Average forward current I 3 F(AV) Junction and storage temperature range T = T - 55 to + 175 C j stg Non repetitive reverse avalanche energy I = 1 A E 20 mJ (BR)R R MAXIMUM THERMAL RESISTANCE (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Junction lead Lead length l = 10 mm, T = constant R 25 K/W L thJL Junction ambient On PC board with spacing 37.5 mm R 70 K/W thJA Rev. 1.8, 11-Sep-12 Document Number: 86047 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BYW178 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 3 A V -- 1.9 V F F V = V I -- 1 A R RRM R Reverse current V = V , T = 100 C I - - 20 A R RRM j R I = 1 A, dI /dt - 50 A/s, F F Reverse recovery current I -2.2 - RM V = 200 V BATT I = 1 A, dI /dt - 50 A/s, ns F F Reverse recovery time t -50 - rr V = 200 V, i = 0.25 x I BATT R RM Reverse recovery time (JEDEC) I = 0.5 A, I = 1 A, i = 0.25 t -- 60 F R R rr TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 40 100.000 T =175C 10.000 j 30 1.000 T =25C j 20 ll 0.100 10 0.010 T = constant L 0.001 0 30 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 16458 V Forward Voltage ( V ) I - Lead Length (mm) 94 9570 F Fig. 1 - Max. Thermal Resistance vs. Lead Length Fig. 3 - Forward Current vs. Forward Voltage 3.5 5 V =V R RRM half sinewave 3.0 dI /dt = 50A/s F R 25 K/W thJA 4 2.5 l = 10mm 2.0 3 1.5 2 1.0 R 70 K/W thJA 0.5 1 PCB: d = 25 mm 0.0 0 0 20 40 60 80 100 120 140 160 180 10 0.1 1 16459 T Ambient Temperature (C ) amb 94 9571 I Forward Current ( A ) F Fig. 2 - Typ. Reverse Recovery Current vs. Forward Voltage Fig. 4 - Max. Average Forward Current vs. Junction Temperature Rev. 1.8, 11-Sep-12 Document Number: 86047 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I Reverse Recovery Current (A) RM R - Therm.Resist. Junction/Ambient (K/W) thJA I Forward Current (A) I Average Forward Current( A ) F FAV