DSA 9 V = 1200-1800 V RRM Avalanche Diode I = 18 A F(RMS) I = 11 A FAVM Replacements see below C DO-203 AA V V V Type RSM (BR)min RRM A C V V V 1300 1300 1200 DSA 9-12F 1700 1750 1600 DSA 9-16F 1900 1950 1800 DSA 9-18F A A = Anode, C = Cathode Features Symbol Conditions Maximum Ratings International standard package I T = T 18 A FRMS VJ VJM JEDEC DO-203 AA I T = 150C 180 sine 11 A FAVM C Planar passivated chips P T , t = 10 ms 4.5 kW RSM VJM p Applications I T = 45C t = 10 ms (50 Hz), sine 250 A FSM VJ t = 8.3 ms (60 Hz), sine 265 Supplies for DC power equipment T = 150C t = 10 ms (50 Hz), sine 200 A DC supply for PWM inverter VJ t = 8.3 ms (60 Hz), sine 220 Field supply for DC motors Battery DC power supplies 2 2 I t T = 45C t = 10 ms (50 Hz), sine 310 A s VJ t = 8.3 ms (60 Hz), sine 295 Advantages 2 T = 150C t = 10 ms (50 Hz), sine 200 A s VJ Space and weight savings t = 8.3 ms (60 Hz), sine 190 Simple mounting T -40...+180 C VJ Improved temperature & power cycling T 180 C VJM Reduced protection circuits T -40...+180 C stg M mounting torque 2.2...2.8 Nm d Dimensions in mm (1 mm = 0.0394 ) Weight typical 5 g 4.4 2.6 Symbol Conditions Characteristic Values typ. max. I V = V T = T 3 mA R R RRM VJ VJM V I = 36 A T = 25C 1.4 V F F VJ V For power-loss calculations only 0.85 V T0 r T = T 15 m T VJ VJM R DC current 2 K/W thJC 180 sine 2.17 K/W R DC current 3.0 K/W thJH d Creepage distance on surface 2.0 mm S d Strike distance through air 2.0 mm A 2 a Max. allowable acceleration 100 m/s 2 Data according to IEC 60747 Type Replacements M5 DSA9-12F DSI30-12A DSA9-16F DSI30-16A DSA9-18F contact factory IXYS reserves the right to change limits, test conditions and dimensions. 20190130b 2019 IXYS All rights reserved 1 - 2 phase-out SW 11 11.5 19.7 2.3 10.5 4 0.5 0.5 4 2 0.8 7.8 10.3 max. 2DSA 9 50 300 1000 V = 0 V R 2 A 800 A A s typ. lim. 250 40 50Hz, 80%V 600 RRM I FSM 2 T = 45C I I t F VJ 200 T = 180C VJ 400 30 T = 180C VJ 150 T = 25C VJ 20 T =45C VJ 100 200 T =180C VJ 10 50 0 0 100 -3 -2 -1 0 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1V.4 1.6 10 10 10 10 s 10 1 2 3 4 5 6 7 m8 s910 V t t F 2 Fig. 1 Forward characteristics Fig. 2 Surge overload current Fig. 3 I t versus time (1-10 ms) I : crest value, t: duration FSM 25 25 DC W d = 180 sin A R : d = 120 thJA d = 60 20 20 8.3 K/W d = 30 P I F F(AV)M 13 K/W (CU80x80) 15 15 18 K/W 10 10 DC 180 sin 120 5 60 5 30 0 0 0 C 0 5 10 15 A 200 50 100 150 200 0 50 100 150 200 C 250 I T T amb F(AV)M case Fig. 4 Power dissipation versus forward current and ambient temperature Fig. 5 Max. forward current at case temperature 5 R for various conduction angles d: thJH 30 K/W 60 d R (K/W) thJH 4 120 DC 3.0 180 Z 180 3.35 DC thJH 120 3.56 3 60 4.0 30 4.64 2 Constants for Z calculation: thJH i R (K/W) t (s) thi i 1 1 0.095 0.00032 2 0.515 0.0102 3 1.39 0.360 0 -3 -2 -1 0 1 2 3 4 4 1.0 2.30 10 10 10 10 10 10 10 s 10 t Fig. 6 Transient thermal impedance junction to heatsink IXYS reserves the right to change limits, test conditions and dimensions. 20190130b 2019 IXYS All rights reserved 2 - 2 phase-out