BYV98-50, BYV98-100, BYV98-150, BYV98-200 www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES High reverse voltage Glass passivated Low reverse current Low forward voltage drop Hermetically sealed axial-leaded glass envelope Material categorization: 949588 For definitions of compliance please see www.vishay.com/doc 99912 MECHANICAL DATA APPLICATIONS Case: SOD-64 Switched mode power supplies Terminals: plated axial leads, solderable per MIL-STD-750, High-frequency inverter circuits method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 858 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYV98-200 BYV98-200-TR 2500 per 10 tape and reel 12 500 BYV98-200 BYV98-200-TAP 2500 per ammopack 12 500 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYV98-50 V = 50 V I = 4 A SOD-64 R F(AV) BYV98-100 V = 100 V I = 4 A SOD-64 R F(AV) BYV98-150 V = 150 V I = 4 A SOD-64 R F(AV) BYV98-200 V = 200 V I = 4 A SOD-64 R F(AV) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BYV98-50 V = V 50 V R RRM BYV98-100 V = V 100 V Reverse voltage = repetitive peak reverse R RRM See electrical characteristics voltage BYV98-150 V = V 150 V R RRM BYV98-200 V = V 200 V R RRM Peak forward surge current t = 10 ms, half sine wave I 70 A p FSM Average forward current T = 30 C, l = 10 mm I 4A amb F(AV) Junction and storage temperature range T = T - 55 to + 175 C j stg Non repetitive reverse avalanche energy l = 1 A E 20 mJ (BR)R R MAXIMUM THERMAL RESISTANCE (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Junction ambient Lead length l = 10 mm, T = constant R 25 K/W L thJA Rev. 1.8, 11-Sep-12 Document Number: 86046 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BYV98-50, BYV98-100, BYV98-150, BYV98-200 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 5 A V -- 1.1 V F F V = V I -- 10 A R RRM R Reverse current V = V , T = 150 C I -- 200 A R RRM j R BYV98-50 V 60 - - V (BR)R BYV98-100 V 120 - - V (BR)R Reverse breakdown voltage I = 100 A R BYV98-150 V 170 - - V (BR)R BYV98-200 V 220 - - V (BR)R Reverse recovery time I = 0.5 A, I = 1 A, i = 0.25 A t - - 35 ns F R R rr TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 120 180 V =V R RRM 160 100 R = thJA 140 BYV98200 25 K/W 80 120 BYV98150 70 K/W 100 60 150 K/W 80 BYV98100 40 60 BYV9850 40 20 20 0 0 25 50 75 100 125 150 175 0.1 1.0 10.0 100.0 15784 T Junction Temperature ( C ) 17194 V Reverse Voltage(V) j R Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 3 - Diode Capacitance vs. Reverse Voltage 10001000 4.5 V =V V =V R RRM R RRM 4.0 half sinewave 3.5 100100 3.0 R = 25 K/W thJA l=10mm 2.5 2.0 1010 1.5 1.0 R = 70 K/W thJA PCB:d=25mm 0.5 11 0.0 2525 5050 7575 100100 125125 150150 175175 0 20 40 60 80 100 120 140 160 180 15785 T Junction Temperature (C ) 15783 T Ambient Temperature (C ) j amb Fig. 2 - Max. Reverse Current vs. Junction Temperature Fig. 4 - Max. Average Forward Current vs. Ambient Temperature Rev. 1.8, 11-Sep-12 Document Number: 86046 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P Reverse Power Dissipation ( mW) I Reverse Current (A) R R I Average Forward Current( A ) C Diode Capacitance ( pF ) FAV D