Product Information

BYW54-TR

BYW54-TR electronic component of Vishay

Datasheet
Rectifiers 2.0 Amp 600 Volt 50 Amp IFSM

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5814 ea
Line Total: USD 0.58

11635 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
11635 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

Stock Image

BYW54-TR
Vishay

1 : USD 0.5814
10 : USD 0.4568
100 : USD 0.3263
500 : USD 0.2931
1000 : USD 0.229
5000 : USD 0.2136
50000 : USD 0.2136

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Product
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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BYW52, BYW53, BYW54, BYW55, BYW56 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current loading AEC-Q101 qualified Material categorization: 949539 for definitions of compliance please see www.vishay.com/doc 99912 MECHANICAL DATA Case: SOD-57 APPLICATIONS Terminals: plated axial leads, solderable per MIL-STD-750, Rectification, general purpose method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYW56 BYW56-TR 5000 per 10 tape and reel 25 000 BYW56 BYW56-TAP 5000 per ammopack 25 000 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYW52 V = 200 V I = 2 A SOD-57 R F(AV) BYW53 V = 400 V I = 2 A SOD-57 R F(AV) BYW54 V = 600 V I = 2 A SOD-57 R F(AV) BYW55 V = 800 V I = 2 A SOD-57 R F(AV) BYW56 V = 1000 V I = 2 A SOD-57 R F(AV) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BYW52 V = V 200 V R RRM BYW53 V = V 400 V R RRM Reverse voltage = repetitive peak reverse See electrical characteristics BYW54 V = V 600 V R RRM voltage BYW55 V = V 800 V R RRM BYW56 V = V 1000 V R RRM Peak forward surge current t = 10 ms, half sine wave I 50 A p FSM Repetitive peak forward current I 12 A FRM Average forward current = 180 I 2A F(AV) Pulse avalanche peak power t = 20 s half sine wave, T = 175 C P 1000 W p j R Pulse energy in avalanche mode, non l = 1 A, T = 175 C E 20 mJ (BR)R j R repetitive (inductive load switch off) 2 2 2 i t-rating it8 A s Junction and storage temperature range T = T -55 to +175 C j stg Rev. 1.9, 04-Nov-15 Document Number: 86049 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BYW52, BYW53, BYW54, BYW55, BYW56 www.vishay.com Vishay Semiconductors MAXIMUM THERMAL RESISTANCE (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, T = constant R 45 K/W L thJA Junction ambient On PC board with spacing 25 mm R 100 K/W thJA ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 1 A V -0.9 1 V F F V = V I -0.1 1 A R RRM R Reverse current V = V , T = 100 C I - 5 10 A R RRM j R Breakdown voltage I = 100 A, t /T = 0.01, t = 0.3 ms V - - 1600 V R p p (BR) Diode capacitance V = 4 V, f = 1 MHz C -18 - pF R D I = 0.5 A, I = 1 A, i = 0.25 A t - - 4000 ns F R R rr Reverse recovery time I = 1 A, dI/dt = 5 A/s, V = 50 V t - - 4000 ns F R rr Reverse recovery charge l = 1 A, dI/dt = 5 A/s Q - - 200 nC F rr TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 120 2.5 ll V = V R RRM half sine wave 100 2.0 80 R = 45 K/W thJA 1.5 T = constant L l = 10 mm 60 1.0 40 R = 100 K/W 0.5 thJA 20 PCB: d = 25 mm 0.0 0 0 5 10 15 202530 0 20 40 60 80 100 120 140 160 180 949101 l - Lead Length (mm) 16351 T - Ambient Temperature (C) amb Fig. 1 - Typ. Thermal Resistance vs. Lead Length Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 10 1000 T = 175 C V = V R RRM j 1 100 T = 25 C j 0.1 10 0.01 0.001 1 0.0 0.4 0.8 1.2 1.6 25 50 75 100 125 150 175 V - Forward Voltage (V) 16350 16352 T - Junction Temperature (C) F j Fig. 4 - Reverse Current vs. Junction Temperature Fig. 2 - Forward Current vs. Forward Voltage Rev. 1.9, 04-Nov-15 Document Number: 86049 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 R - Ther. Resist. Junction/Ambient (K/W) I - Forward Current (A) thJA F I - Reverse Current (A) I - Average Forward Current (A) R FAV

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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