X-On Electronics has gained recognition as a prominent supplier of BYW82-TR Rectifiers across the USA, India, Europe, Australia, and various other global locations. BYW82-TR Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

BYW82-TR Vishay

BYW82-TR electronic component of Vishay
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Part No.BYW82-TR
Manufacturer: Vishay
Category: Rectifiers
Description: Vishay Semiconductors Rectifiers 3.0 Amp 200 Volt 100 Amp IFSM
Datasheet: BYW82-TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.133 ea
Line Total: USD 1.13 
Availability - 5340
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5340
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 1.133
10 : USD 0.7733
100 : USD 0.5654
500 : USD 0.5203
1000 : USD 0.4576
2500 : USD 0.4466
5000 : USD 0.4378
12500 : USD 0.429
25000 : USD 0.4279

   
Manufacturer
Product Category
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Product
Brand
Factory Pack Quantity :
Rohs Mouser
Height
Length
Termination Style
Width
Cnhts
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Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BYW82-TR from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BYW82-TR and other electronic components in the Rectifiers category and beyond.

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BYW82, BYW83, BYW84, BYW85, BYW86 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current High surge current loading 949588 AEC-Q101 qualified Material categorization: MECHANICAL DATA for definitions of compliance please see Case: SOD-64 www.vishay.com/doc 99912 Terminals: plated axial leads, solderable per MIL-STD-750, APPLCIATIONS method 2026 Rectification, general purpose Polarity: color band denotes cathode end Mounting position: any Weight: approx. 858 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYW82 or BYW83 or BYW84 and BYW86 BYW86-TR 2500 per 10 tape and reel 12 500 BYW82 or BYW84 and BYW85 BYW85-TAP 2500 per ammopack 12 500 BYW85 BYW85TR 2500 per 10 tape and reel 12 500 BYW83 or BYW86 BYW86TAP 2500 per ammopack 12 500 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYW82 V = 200 V, I = 3 A SOD-64 R F(AV) BYW83 V = 400 V, I = 3 A SOD-64 R F(AV) BYW84 V = 600 V, I = 3 A SOD-64 R F(AV) BYW85 V = 800 V, I = 3 A SOD-64 R F(AV) BYW86 V = 1000 V, I = 3 A SOD-64 R F(AV) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BYW82 V = V 200 V R RRM BYW83 V = V 400 V R RRM Reverse voltage = repetitive peak reverse See electrical characteristics BYW84 V = V 600 V R RRM voltage BYW85 V = V 800 V R RRM BYW86 V = V 1000 V R RRM Peak forward surge current t = 10 ms, half sine wave I 100 A p FSM Repetitive peak forward current I 18 A FRM Average forward current I 3A F(AV) Pulse avalanche peak power t = 20 s, half sine wave, T = 175 C P 1000 W p j R Pulse energy in avalanche mode, non I = 1 A, T = 175 C E 20 mJ (BR)R j R repetitive (inductive load switch off) 2 2 i t-rating it40 A2s Junction and storage temperature range T = T -55 to +175 C j stg Rev. 2.0, 04-Nov-15 Document Number: 86051 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BYW82, BYW83, BYW84, BYW85, BYW86 www.vishay.com Vishay Semiconductors MAXIMUM THERMAL RESISTANCE (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, T = constant R 25 K/W L thJA Junction ambient On PC board with spacing 25 mm R 70 K/W thJA ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 3 A V -- 1 V F F V = V I -0.1 1 A R RRM R Reverse current V = V , T = 100 C I - 5 10 A R RRM j R Breakdown voltage I = 100 A, tp/T = 0.01, tp = 0.3 ms V - - 1600 V R (BR) Diode capacitance V = 4 V, f = 1 MHz C -40 60 pF R D I = 0.5 A, I = 1 A, i = 0.25 A t -3.5 5 s F R R rr Reverse recovery time I = 1 A, dI/dt = 5 A/s, VR = 50 V t -4.5 7.5 s F rr Reverse recovery charge l = 1 A, dI/dt = 5 A/s Q - 8 12 C F rr TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 40 100 10 30 T = 175 C j 1 20 T = 25 C j ll 0.1 10 0.01 T = constant L 0 0.001 0 5 10 15 20 25 30 0 0.4 0.8 1.2 1.6 2.0 94 9563 I - Lead Length (mm) 16360 V - Forward Voltage (V) F Fig. 1 - Max. Thermal Resistance vs. Lead Length Fig. 3 - Forward Current vs. Forward Voltage 3.5 350 V = V V = V R RRM R RRM half sinewave 3.0 300 R = 25 K/W thJA I = 10 mm 2.5 250 P -Limit R 2.0 200 at 100 % V R 1.5 150 P -Limit R 1.0 100 at 80 % V R R = 70 K/W thJA 0.5 50 PCB: d = 25 mm 0.0 0 0 20 40 60 80 100 120 140 160 180 25 50 75 100 125 150 175 T - Junction Temperature (C) 16361 T - Ambient Temperature (C) 16363 j amb Fig. 2 - Max. Average Forward Current vs. Ambient Temperature Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature Rev. 2.0, 04-Nov-15 Document Number: 86051 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 R - Therm. Resist. thJA I - Average Forward Current (A) FAV Junction/Ambient (K/W) I - Forward Current (A) F P - Reverse Power Dissipation (mW) R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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BCC
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