HS1J F2 Taiwan Semiconductor

creat by ART HS1A - HS1M 1.0AMP High Efficient Surface Mount Rectifiers SMA/DO-214AC RoHRoHSS Pb COCOMMPPLILIANANCCEE Features Glass passivated junction chip. For surface mounted application Low forward voltage drop Low profile package Built-in stain relief, ideal for automatic placement Fast switching for high efficiency High temperature soldering: 260 /10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V-0 Green compound with suffix on packing code & prefix on datecode Dimensions in inches and (millimeters) Mechanical Data Cases: Molded plastic Marking Diagram Terminal: Pure tin plated, lead free HS1X = Specific Device Code Polarity: Indicated by cathode band G = Green Compound Packing: 12mm tape per EIA STD RS-481 Y = Year Weight: 0.064 grams M = Work Month Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% HS HS HS HS HS HS HS HS Symbol Units Type Number 1A 1B 1D 1F 1G 1J 1K 1M Maximum Recurrent Peak Reverse Voltage V 50 100 200 300 400 600 800 1000 V RRM Maximum RMS Voltage V 35 70 140 210 280 420 560 700 V RMS Maximum DC Blocking Voltage V 50 100 200 300 400 600 800 1000 V DC Maximum Average Forward Rectified Current I 1 A F(AV) See Fig. 1 Peak Forward Surge Current, 8.3 ms Single Half Sine- I 30 A FSM wave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) V 1.0 1.3 1.7 V F 1 A 5 Maximum DC Reverse T =25 A Current at Rated DC T =100 I 50 uA A R Blocking Voltage T =125 150 A Maximum Reverse Recovery Time (Note 2) Trr 50 75 nS Typical Junction Capacitance (Note 3) Cj 20 15 pF O Typical Thermal Resistance R 70 JA C/W O Operating Temperature Range T - 55 to + 150 C J O Storage Temperature Range T - 55 to + 150 STG C Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A F R RR Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0Volts. Version:F11RATINGS AND CHARACTERISTIC CURVES (HS1A THRU HS1M) FIG. 2- TYPICAL REVERSE CHARACTERISTICS FIG.1- MAXIMUM AVERAGE FORWARD CURRENT 1000 DERATING 1.2 1 0.8 TA=125 100 0.6 0.4 10 0.2 TA=25 0 80 90 100 110 120 130 140 150 o LEAD TEMPERATURE ( C) 1 0.1 0 20 40 60 80 100 120 140 FIG. 3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PERCENT OF RATED PEAK REVERSE VOLTAGE 40 (%) 35 8.3mS Single Half Sine Wave 30 JEDEC Method 25 20 15 10 5 1 10 100 FIG. 5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISRICS NUMBER OF CYCLES AT 60 Hz 100 TA=25 10 FIG. 4- TYPICAL JUNCTION CAPACITANCE HS1A-HS1D 70 60 1 50 HS1G 40 30 HS1A-HS1G HS1J-HS1M 0.1 20 HS1J-HS1M 10 0 0.01 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 REVERSE VOLTAGE (V) FORWARD VOLTAGE (V) Version:F11 PEAK FORWARD SURGE AVERAGE FORWARD JUNCTION CAPACITANCE (pF) URRENT (A) CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (uA)