BYX82, BYX83, BYX84, BYX85, BYX86 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 949539 APPLICATIONS MECHANICAL DATA Rectification, general purpose Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYX86 BYX86TR 5000 per 10 tape and reel 25 000 BYX86 BYX86TAP 5000 per ammopack 25 000 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYX82 V = 200 V I = 2 A SOD-57 R F(AV) BYX83 V = 400 V I = 2 A SOD-57 R F(AV) BYX84 V = 600 V I = 2 A SOD-57 R F(AV) BYX85 V = 800 V I = 2 A SOD-57 R F(AV) BYX86 V = 1000 V I = 2 A SOD-57 R F(AV) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BYX82 V = V 200 V R RRM BYX83 V = V 400 V R RRM Reverse voltage = repetitive peak See electrical characteristics BYX84 V = V 600 V R RRM reverse voltage BYX85 V = V 800 V R RRM BYX86 V = V 1000 V R RRM Peak forward surge current t = 10 ms, half sine wave I 50 A p FSM Repetitive peak forward current I 10 A FRM Average forward current T 45 C I 2A amb F(AV) 2 2 2 i t-rating i t8 A s Junction and storage temperature T = T - 55 to + 175 C j stg range Rev. 1.7, 11-Sep-12 Document Number: 86052 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BYX82, BYX83, BYX84, BYX85, BYX86 www.vishay.com Vishay Semiconductors MAXIMUM THERMAL RESISTANCE (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, T = constant R 45 K/W L thJA Junction ambient On PC board with spacing 25 mm R 100 K/W thJA ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 1 A V -0.9 1 V F F V = V I -0.1 1 A R RRM R Reverse current V = V , T = 100 C I -10 25 A R RRM j R Diode capacitance V = 4 V, f = 1 MHz C -20 - pF R D Reverse recovery time I = 0.5 A, I = 1 A, i = 0.25 A t -2 4 s F R R rr Reverse recovery charge I = I = 1 A, dI/dt = 5 A/s Q -3 6 C F R rr TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 120 10 ll 100 T = 175C j 80 1 T = constant L 60 T =25C j 40 0.1 20 Scattering Limits 0 0.01 0 510 15 20 25 30 0 0.6 1.2 1.8 2.4 3.0 l Lead Length ( mm ) V Forward Voltage(V) 94 9572 94 9573 F Fig. 1 - Max. Thermal Resistance vs. Lead Length Fig. 3 - Forward Current vs. Forward Voltage 240 30 R 35 K/W thJA R 57 K/W thJA 200 R 100 K/W thJA 24 V RRM 160 18 V R 120 BYX BYX 12 82 84 80 BYX BYX 83 85 6 40 f = 1 MHz BYX T =25C j 86 0 0 1600 100 0 400 800 1200 0.1 1 10 Reverse / Repetitive Peak Reverse Voltage(V) 94 9579 94 9574 V Reverse Voltage(V) R Fig. 2 - Junction Temperature vs. Fig. 4 - Typ. Diode Capacitance vs. Reverse Voltage Reverse/Repetitive Peak Reverse Voltage Rev. 1.7, 11-Sep-12 Document Number: 86052 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 T Junction Temperature ( C ) R Therm. Resist.Junction/ Ambient ( K/W) j thJA C Diode Capacitance ( pF ) I Forward Current (A ) D F