BYV79E-200,127 NXP

DISCRETE SEMICONDUCTORS BYV79E series Rectifier diodes ultrafast, rugged Product specification July 1998 Semiconductors Product specification Rectifier diodes BYV79E series ultrafast, rugged FEATURES SYMBOL QUICK REFERENCE DATA Low forward volt drop V = 150 V/ 200 V R Fast switching Soft recovery characteristic V 0.9 V F k a Reverse surge capability 12 High thermal cycling performance I = 14 A F(AV) Low thermal resistance I 0.2 A RRM t 30 ns rr GENERAL DESCRIPTION PINNING SOD59 (TO220AC) Ultra-fast, epitaxial rectifier diodes PIN DESCRIPTION tab intended for use as output rectifiers in high frequency switched mode 1 cathode power supplies. 2 anode The BYV79E series is supplied in the conventional leaded SOD59 tab cathode (TO220AC) package. 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BYV79E -150 -200 V Peak repetitive reverse voltage - 150 200 V RRM V Crest working reverse voltage - 150 200 V RWM V Continuous reverse voltage T 145C - 150 200 V R mb 1 I Average forward current square wave - 14 A F(AV) = 0.5 T 120 C mb I Repetitive peak forward current t = 25 s = 0.5 - 28 A FRM T 120 C mb I Non-repetitive peak forward t = 10 ms - 150 A FSM current t = 8.3 ms - 160 A sinusoidal with reapplied V RWM(max) I Repetitive peak reverse current t = 2 s = 0.001 - 0.2 A RRM p I Non-repetitive peak reverse t = 100 s - 0.2 A RSM p current T Storage temperature -40 150 C stg T Operating junction temperature - 150 C j 1. Neglecting switching and reverse current losses. ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V Electrostatic discharge Human body model - 8 kV C capacitor voltage C = 250 pF R = 1.5 k July 1998 1 Rev 1.200