BYW29EX-200 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BYW29EX series Rectifier diodes ultrafast, rugged Product specification October 1998NXP Semiconductors Product specification Rectifier diodes BYW29EX series ultrafast, rugged GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated epitaxial rectifier SYMBOL PARAMETER MAX. MAX. UNIT diodes in a full pack plastic envelope, featuring low forward voltage drop, BYW29EX- 150 200 ultra-fast recovery times, soft recovery V Repetitive peak reverse 150 200 V RRM characteristic and guaranteed reverse voltage surge and ESD capability. They are V Forward voltage 0.895 0.895 V F intended for use in switched mode power I Forward current 8 8 A F(AV) supplies and high frequency circuits in t Reverse recovery time 25 25 ns rr general where low conduction and I Repetitive peak reverse 0.2 0.2 A RRM switching losses are essential. current PINNING - SOD113 PIN CONFIGURATION SYMBOL PIN DESCRIPTION case 1 cathode k a 2 anode 12 case isolated 12 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -150 -200 V Repetitive peak reverse voltage - 150 200 V RRM V Crest working reverse voltage - 150 200 V RWM V Continuous reverse voltage - 150 200 V R 1 I Average forward current square wave = 0.5 F(AV) T 106 C - 8 A hs sinusoidal a = 1.57 T 109 C - 7.3 A hs I RMS forward current - 11.3 A F(RMS) I Repetitive peak forward current t = 25 s = 0.5 - 16 A FRM T 106 C hs I Non-repetitive peak forward t = 10 ms - 80 A FSM current t = 8.3 ms - 88 A sinusoidal with reapplied V RWM(max) 2 2 2 ItI t for fusing t = 10 ms - 32 A s I Repetitive peak reverse current t = 2 s = 0.001 - 0.2 A RRM p I Non-repetitive peak reverse t = 100 s - 0.2 A RSM p current T Storage temperature -40 150 C stg T Operating junction temperature - 150 C j 1 Neglecting switching and reverse current losses October 1998 1 Rev 1.200