BZA418A,165 NXP

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 BZA418A Quadruple ESD transient voltage suppressor Product data sheet 2002 Sep 02NXP Semiconductors Product data sheet Quadruple ESD transient voltage BZA418A suppressor FEATURES PINNING ESD rating >8 kV, according to IEC1000-4-2 PIN DESCRIPTION SOT457 surface mount package 1 cathode 1 Common anode configuration 2 common Non-clamping range 0.5 to 18 V 3 cathode 2 Maximum reverse peak power dissipation: 4 cathode 3 19.6 W at t = 1 ms p 5 common Maximum clamping voltage at peak pulse current: 6 cathode 4 27 V at I = 0.7 A. ZSM APPLICATIONS handbook, halfpage 6 5 4 Computers and peripherals 1 Audio and video equipment 3 2 Communication systems 4 5 Medical equipment. 6 132 Top view MAM357 DESCRIPTION Monolithic transient voltage suppressor diode in a six lead SOT457 (SC-74) package for 4-bit wide ESD transient Marking code: L1. suppression at 18 V level. Fig.1 Simplified outline (SOT457) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode I working current T = 60 C note 1 note 2 mA Z s I continuous forward current T = 60 C 100 mA F s I non-repetitive peak forward t = 1 ms square pulse 3.75 A FSM p current I non-repetitive peak reverse t = 1 ms square pulse see Fig.2 0.7 A ZSM p current P total power dissipation T = 60 C see Fig.3 720 mW tot s P non repetitive peak reverse power square pulse t = 1 ms see Fig.4 19.6 W ZSM p dissipation T storage temperature 65 +150 C stg T junction temperature 65 +150 C j Notes 1. T is the temperature at the soldering point of the anode pin. s 2. DC working current limited by P . tot max 2002 Sep 02 2