Product Information

BYW29ED-200,118

BYW29ED-200,118 electronic component of NXP

Datasheet
Rectifiers TAPE13 REC-EPI
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.4185 ea
Line Total: USD 1.42

7275 - Global Stock
Ships to you between
Wed. 22 May to Fri. 24 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
3306 - WHS 1


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 0.9913
10 : USD 0.7866
100 : USD 0.6451
500 : USD 0.5428
1000 : USD 0.4784
2500 : USD 0.4554
5000 : USD 0.429
10000 : USD 0.4163
25000 : USD 0.4163

Read More Specifications

     
Manufacturer
Product Category
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Product
Brand
Factory Pack Quantity :
Rohs Mouser
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

BYW29ED-200 Ultrafast power diode 26 September 2018 Product data sheet 1. General description Ultrafast, epitaxial rectifier diode in a SOT428 (DPAK) surface-mountable package. 2. Features and benefits Low forward voltage drop Fast switching Soft recovery characteristic Surface-mountable package High thermal cycling performance Low thermal resistance 3. Applications High-frequency switched-mode power supplies Low loss rectification 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse voltage DC - - 200 V R V repetitive peak reverse - - 200 V RRM voltage I average forward = 0.5 T 128 C square-wave - - 8 A F(AV) mb current pulse Fig. 1 Fig. 2 I non-repetitive peak t = 10 ms T = 25 C sine-wave - - 80 A FSM p j(init) forward current pulse with reapplied V RRM(Max) Static characteristics V forward voltage I = 8 A T = 25 C Fig. 5 - 0.92 1.05 V F F j I = 20 A T = 25 C Fig. 5 - 1.1 1.3 V F j I = 8 A T = 150 C Fig. 5 - 0.8 0.895 V F j Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 100 A/ - 20 25 ns rr F R F s T = 25 C ramp recovery Fig. 6 j Fig. 7 Fig. 8 step recovery when switched from I = - 15 20 ns F 0.5 A to I = 1 A measured at I = 0.25 R R AWeEn Semiconductors BYW29ED-200 Ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 n.c. no connection K A 001aaa020 2 K cathode 1 3 A anode mb K mounting base cathode DPAK (SOT428) 1 it is not possible to make connection with Pin 2 of the SOT428 package 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYW29ED-200 DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) BYW29ED-200 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 26 September 2018 2 / 11

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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