BYV37, BYV38 www.vishay.com Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 949539 APPLICATIONS Fast soft recovery rectification diode MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYV38 BYV38-TR 5000 per 10 tape and reel 25 000 BYV38 BYV38-TAP 5000 per ammopack 25 000 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYV37 V = 800 V I = 2 A SOD-57 R F(AV) BYV38 V = 1000 V I = 2 A SOD-57 R F(AV) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BYV37 V = V 800 V R RRM Reverse voltage See electrical characteristics BYV38 V = V 1000 V R RRM Peak forward surge current t = 10 ms, half sine wave I 50 A p FSM Average forward current I 2A F(AV) Non repetitive reverse avalanche energy I = 0.4 A E 10 mJ (BR)R R Junction and storage temperature range T = T - 55 to + 175 C j stg MAXIMUM THERMAL RESISTANCE (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, T = constant R 45 K/W L thJA Junction ambient On PC board with spacing 25 mm R 100 K/W thJA Rev. 1.8, 04-Sep-12 Document Number: 86045 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BYV37, BYV38 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 1 A V -1 1.1 V F F V = V I -- 5 A R RRM R Reverse current V = V , T = 150 C I - - 150 A R RRM j R Reverse recovery time I = 0.5 A, I = 1 A, i = 0.25 A t - - 300 ns F R R rr Diode capacitance V = 4 V, f = 1 MHz C -15 - pF R D TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 120 V = V R RRM 100 100 80 60 ll 10 40 20 T = constant L 0 1 25 50 75 100 125 150 175 0 5 10 15 202530 949552 l - Lead Length (mm) 15775 T - Junction Temperature (C) j Fig. 1 - Max. Thermal Resistance vs. Lead Length Fig. 3 - Max. Reverse Current vs. Junction Temperature 500 10 V = V R RRM 450 400 T = 175 C j 1 350 R = 45 K/W 300 thJA T = 25 C j 250 0.1 100 K/W 200 160 K/W 150 0.01 100 BYV38 50 BYV37 0 0.001 25 50 75 100 125 150 175 0 0.4 0.8 1.2 1.6 2.0 15774 T - Junction Temperature (C) 16343 V - Forward Voltage (V) j F Fig. 2 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 4 - Forward Current vs. Forward Voltage Rev. 1.8, 04-Sep-12 Document Number: 86045 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Reverse Power Dissipation (mW) R - Ther. Resist. Junction/Ambient (K/W) R thJA I - Forward Current (A) F I - Reverse Current (A) R