BYV32EB-200,118 NXP

BYV32EB-200 Dual ultrafast power diode Rev.02 - 26 November 2019 Product data sheet 1. General description Dual ultrafast power diode in a TO263 (D2PAK) surface-mountable plastic package. 2. Features and benefits High reverse voltage surge capability High thermal cycling performance Low thermal resistance Very low on-state loss Soft recovery characteristic minimizes power consuming oscillations Surface-mountable package 3. Applications Output rectifiers in high-frequency switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak reverse 200 V RRM voltage I average output current = 0.5 square-wave pulse T 115 C 20 A O(AV) mb both diodes conducting Fig. 1 Fig. 2 I repetitive peak reverse = 0.001 t = 2 s 0.2 A RRM p current V electrostatic discharge HBM C = 250 pF R = 1.5 k all pins 8 kV ESD voltage Static characteristics V forward voltage I = 8 A T = 150 C Fig. 4 - 0.72 0.85 V F F j I = 20 A T = 25 C - 1 1.15 V F j Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 100 A/s - 20 25 ns rr F R F T = 25 C ramp recovery Fig. 5 jWeEn Semiconductors BYV32EB-200 Dual ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A1 anode 1 2 K cathode 1 A1 A2 3 A2 anode 2 K mb K mounting base cathode sym125 TO-263 (D2PAK) 1 it is not possible to make a connection to pin 2 of the TO263 package 6. Ordering information Table 3. Ordering information Type number Package Orderable part number Packing Small packing Package Package Name method quantity version issue date BYV32EB-200 TO263 BYV32EB-200,118 Reel 800 TO263N 26-Sep-2016 7. Marking Table 4. Marking codes Type number Marking codes BYV32EB-200 BYV32EB-200 BYV32EB-200 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2019. All rights reserved Product data sheet 26 November 2019 2 / 10