BYW172D, BYW172F, BYW172G www.vishay.com Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Low forward voltage drop 949588 High pulse current capability Material categorization: MECHANICAL DATA For definitions of compliance please see Case: SOD-64 www.vishay.com/doc 99912 Terminals: plated axial leads, solderable per MIL-STD-750, APPLICATIONS method 2026 Polarity: color band denotes cathode end Fast rectification diode in S.M.P.S Mounting position: any Weight: approx. 858 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYW172G BYW172G-TR 2500 per 10 tape and reel 12 500 BYW172G BYW172G-TAP 2500 per ammopack 12 500 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYW172D V = 200 V I = 3 A SOD-64 R F(AV) BYW172F V = 300 V I = 3 A SOD-64 R F(AV) BYW172G V = 400 V I = 3 A SOD-64 R F(AV) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BYW172D V = V 200 V R RRM Reverse voltage = repetitive peak reverse See electrical characteristics BYW172F V = V 300 V R RRM voltage BYW172G V = V 400 V R RRM Peak forward surge current t = 10 ms, half sine wave I 100 A p FSM Average forward current I 3A F(AV) Non repetitive reverse avalanche energy I = 1 A E 20 mJ (BR)R R Junction and storage temperature range T = T - 55 to + 175 C j stg MAXIMUM THERMAL RESISTANCE (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, T = constant R 25 K/W L thJA Junction ambient On PC board with spacing 25 mm R 70 K/W thJA Rev. 1.4, 11-Sep-12 Document Number: 86096 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BYW172D, BYW172F, BYW172G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT I = 3 A V -- 1.1 V F F Forward voltage I = 9 A V -- 1.5 V F F V = V I -- 1 A R RRM R Reverse current V = V , T = 100 C I - - 20 A R RRM j R Reverse recovery time I = 0.5 A, I = 1 A, i = 0.25 A t - 75 100 ns F R R rr TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 40 3.5 V = V R RRM half sinewave 3.0 30 2.5 R = 25 K/W thJA I = 10 mm 2.0 20 ll 1.5 R = 70 K/W thJA 1.0 10 PCB: d = 25 mm 0.5 T = constant L 0 0 0 5 10 15 202530 0 20406080 100120140160180 949466 l - Lead Length (mm) 16388 T - Ambient Temperature (C) amb Fig. 1 - Max. Thermal Resistance vs. Lead Length Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 100 1000 V = V R RRM 10 T = 175 C j 100 1 T = 25 C j 0.1 10 0.01 0.001 1 0 0.5 1.0 1.5 2.0 2.5 25 50 75 100 125 150 175 16387 V - Forward Voltage (V) F 16389 T - Junction Temperature (C) j Fig. 2 - Max. Forward Current vs. Forward Voltage Fig. 4 - Max. Reverse Current vs. Junction Temperature Rev. 1.4, 11-Sep-12 Document Number: 86096 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (A) R - Ther. Resist. Junction/Ambient (K/W) F thJA I - Reverse Current (A) R I - Average Forward Current (A) FAV