BYV34G-600,127 NXP

BYV34G-600 Dual rectier diode, ultrafast Rev. 01 25 February 2009 Product data sheet 1. Product prole 1.1 General description Ultrafast, dual common cathode, epitaxial rectier diode in a SOT226 (I2PAK), low-prole plastic package. 1.2 Features n Fast switching n Low thermal resistance n Soft recovery characteristic n High thermal cycling performance n Low switching loss n Low forward voltage drop 1.3 Applications n Output rectiers in high frequency n Discontinuous Current Mode (DCM) switched-mode power supplies Power Factor Correction (PFC) 1.4 Quick reference data n V 600 V n I 20 A RRM O(AV) n V 1.16 V n t 60 ns F rr 2. Pinning information Table 1. Pinning Pin Description Simplied outline Graphic symbol 1 anode 1 mb 2 cathode 1 3 3 anode 2 2 sym084 mb mounting base cathode 1 2 3 SOT226 (I2PAK)BYV34G-600 NXP Semiconductors Dual rectier diode, ultrafast 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BYV34G-600 I2PAK plastic single-ended package (I2PAK) low-prole 3-lead TO-220AB SOT226 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak reverse voltage - 600 V RRM V crest working reverse voltage - 600 V RWM V reverse voltage DC T 138 C - 600 V R mb I average output current square waveform = 0.5 T 107 C both -20 A O(AV) mb diodes conducting I repetitive peak forward current t =25 s square waveform = 0.5 -20 A FRM p T 107 C per diode mb I non-repetitive peak forward current t = 10 ms sinusoidal waveform per diode - 120 A FSM p t = 8.3 ms sinusoidal waveform per diode - 132 A p T storage temperature - 40 +150 C stg T junction temperature - 150 C j BYV34G-600 1 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 25 February 2009 2 of 9