X-On Electronics has gained recognition as a prominent supplier of IDB30E60ATMA1 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. IDB30E60ATMA1 Diodes - General Purpose, Power, Switching are a product manufactured by Infineon. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

IDB30E60ATMA1 Infineon

IDB30E60ATMA1 electronic component of Infineon
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Part No.IDB30E60ATMA1
Manufacturer: Infineon
Category: Diodes - General Purpose, Power, Switching
Description: Diode: switching; SMD; 600V; 30A; TO263-3
Datasheet: IDB30E60ATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.0514 ea
Line Total: USD 3.05 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 1.8884

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 3.0514
5 : USD 2.6179
11 : USD 1.7345
28 : USD 1.6381

   
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Peak Reverse Voltage
If - Forward Current
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We are delighted to provide the IDB30E60ATMA1 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IDB30E60ATMA1 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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IDB30E60 Fast Switching EmCon Diode Product Summary V 600 V RRM I 30 A F V 1.5 V Feature F T 175 C 600 V EmCon technology jmax Fast recovery Soft switching Low reverse recovery charge Low forward voltage 175C operating temperature Easy paralleling Type Package Ordering Code Marking Pin 1 PIN 2 PIN 3 D30E60 IDB30E60 PG-TO263-3 - NC C A Maximum Ratings, at T = 25 C, unless otherwise specified j PParameterarameter SymbolSymbol ValueValue UnUnitit Repetitive peak reverse voltage V 600 V Repetitive peak reverse voltage V 600 V RRMR R M Continous forward current I A Continuous forward current F 52.3 T = 25C I A T =25C 52.3 C F C 34.9 T = 90C C T =90C 34.9 C Surge non repetitive forward current Surge non repetitive forward current I 117 I 117 A FSMF S M T = 25C, t = 10 ms, sine halfwave C p T =25C, t =10 ms, sine halfwave C p Maximum repetitive forward current I 81 A F R M Maximum repetitive forward current I 81 FRM T = 25C, t limited by t , D = 0.5 C p j,max T =25C, t limited by T , D=0.5 C p jmax Power dissipation W Power dissipation P 142.9 T = 25C P W C tot t o t 80.9 T = 90C T =25C 142.9 C C Operating junction temperature T - 40+ 17 5 T =90C 80.9 j C Storage temperature T -55...+150 s t g -55...+175 C Operating and storage temperature T , T C j stg Soldering temperature Soldering temperature T 260 C S T 260 S 1.6mm (0.063 in.) from case for 10 s reflow soldering, MSL1 Page 1 Rev.2.4 2009-03-04IDB30E60 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 1.05 K/W Thermal resistance, junction - case R thJC - - 62 Thermal resistance, junction - ambient, leaded R thJA SMD version, device on PCB: R thJA min. footprint - - 62 2 1) 6 cm cooling area - 35 - Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics Reverse leakage current I A R V =600V, T =25C - - 50 R j V =600V, T =150C - - 2500 R j Forward voltage drop V V F I =30A, T =25C - 1.5 2 F j I =30A, T =150C - 1.5 - F j 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 Rev.2. 4 2009-03-04

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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