BYV42E-200 NXP

DISCRETE SEMICONDUCTORS DATA SHEET BYV42E, BYV42EB series Rectifier diodes ultrafast, rugged Product specification July 1998NXP Semiconductors Product specification Rectifier diodes BYV42E, BYV42EB series ultrafast, rugged FEATURES SYMBOL QUICK REFERENCE DATA Low forward volt drop V = 150 V/ 200 V R Fast switching Soft recovery characteristic V 0.85 V a1 a2 F Reverse surge capability 13 High thermal cycling performance I = 30 A O(AV) Low thermal resistance I = 0.2 A k 2 RRM t 28 ns rr GENERAL DESCRIPTION Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV42E series is supplied in the SOT78 conventional leaded package. The BYV42EB series is supplied in the SOT404 surface mounting package. PINNING SOT78 (TO220AB) SOT404 PIN DESCRIPTION tab tab 1 anode 1 (a) 1 2 cathode (k) 3 anode 2 (a) 2 13 123 tab cathode (k) LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BYV42E / BYV42EB -150 -200 V Peak repetitive reverse voltage - 150 200 V RRM V Crest working reverse voltage - 150 200 V RWM V Continuous reverse voltage T 144C - 150 200 V R mb I Average rectified output current square wave - 30 A O(AV) (both diodes conducting) = 0.5 T 108 C mb I Repetitive peak forward current t = 25 s = 0.5 - 30 A FRM per diode T 108 C mb I Non-repetitive peak forward t = 10 ms - 150 A FSM current per diode t = 8.3 ms - 160 A sinusoidal with reapplied V RWM(max) I Repetitive peak reverse current t = 2 s = 0.001 - 0.2 A RRM p per diode I Non-repetitive peak reverse t = 100 s - 0.2 A RSM p current per diode T Storage temperature -40 150 C stg T Operating junction temperature - 150 C j 1. It is not possible to make connection to pin 2 of the SOT404 package 2. SOT78 package, For output currents in excess of 20 A, the cathode connection should be made to the mounting tab. July 1998 1 Rev 1.200