BYV72EW-200,127 NXP

BYV72EW-200 Dual ultrafast power diode 26 September 2018 Product data sheet 1. General description Dual ultrafast power diode in a SOT429 (3-lead TO-247) plastic package. 2. Features and benefits Very low on-state loss Fast switching Soft recovery characteristic minimizes power consuming oscillations High reverse surge capability High thermal cycling performance Low thermal resistance 3. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse voltage DC - - 200 V R I average forward = 0.5 T 113 C square-wave - - 15 A F(AV) mb current pulse per diode Fig. 1 Fig. 2 Fig. 3 I non-repetitive peak t = 10 ms T = 25 C sine-wave - - 170 A FSM p j(init) forward current pulse per diode Fig. 4 t = 8.3 ms T = 25 C sine-wave - - 185 A p j(init) pulse per diode Static characteristics V forward voltage I = 15 A T = 25 C Fig. 6 - 0.95 1.05 V F F j I = 30 A T = 25 C Fig. 6 - 1 1.2 V F j I = 15 A T = 150 C Fig. 6 - 0.78 0.9 V F j Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 100 A/s - 20 28 ns rr F R F T = 25 C Fig. 7 jWeEn Semiconductors BYV72EW-200 Dual ultrafast power diode 4. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A1 anode 1 A1 A2 2 K cathode K 3 A2 anode 2 sym125 mb K mounting base cathode 1 2 3 TO-247 (SOT429) 5. Ordering information Table 3. Ordering information Type number Package Name Description Version BYV72EW-200 TO-247 plastic single-ended through-hole package heatsink mounted 1 SOT429 mounting hole 3 lead TO-247 BYV72EW-200 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 26 September 2018 2 / 11