BYV410X-600,127 NXP

BYV410X-600 Dual enhanced ultrafast power diode Rev. 02 - 7 November 2018 Product data sheet 1. General description Dual enhanced ultrafast power diode in a TO220 F plastic package. 2. Features and benefits High thermal cycling performance Isolated package Low thermal resistance Soft recovery characteristic minimizes power consuming oscillations Very low on-state losses 3. Applications Dual mode (DCM and CCM) PFC Power Factor Correction (PFC) for Interleaved Topology 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse voltage DC - - 600 V R I non-repetitive peak t = 8.3 ms T = 25 C SIN per - - 132 A FSM p j(init) forward current diode t = 10 ms T = 25 C SIN per - - 120 A p j(init) diode Static characteristics V forward voltage I = 10 A T = 25 C Fig. 4 - 1.4 2.1 V F F j I = 10 A T = 150 C - 1.3 1.9 V F j Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 100 A/s - 20 35 ns rr F R F T = 25 C Fig. 5 jWeEn Semiconductors BYV410X-600 Dual enhanced ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A1 anode 1 mb A1 A2 2 K cathode K 3 A2 anode 2 sym125 mb n.c. mounting base isolated 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number Package Orderable part number Packing Small packing Package Package Name method quantity version issue date BYV410X-600 TO220F BYV410X-600, 127 Tube 50 SOT186A 14-Nov-2013 BYV410X-600/L01 TO220F BYV410X-600/L01 Q Tube 50 SOT186A/L01 14-Nov-2013 BYV410X-600 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 7 November 2018 2 / 1 1