X-On Electronics has gained recognition as a prominent supplier of MUR120S R4G Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. MUR120S R4G Diodes - General Purpose, Power, Switching are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

MUR120S R4G Taiwan Semiconductor

MUR120S R4G electronic component of Taiwan Semiconductor
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Part No.MUR120S R4G
Manufacturer: Taiwan Semiconductor
Category: Diodes - General Purpose, Power, Switching
Description: Diode Switching 200V 1A Automotive 2-Pin SMB T/R
Datasheet: MUR120S R4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
108: USD 0.0778 ea
Line Total: USD 8.4 
Availability - 0
MOQ: 108  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 108
Multiples : 1
108 : USD 0.0778

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 88
Multiples : 88
88 : USD 0.1264

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.4002
6000 : USD 0.3765

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
Configuration
Vf - Forward Voltage
Packaging
Brand
Operating Temperature Range
Pin Count
Rad Hardened
Rev Curr
Rev Recov Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MUR120S R4G from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MUR120S R4G and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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creat by art MUR105S - MUR160S 1.0 AMP. Surface Mount Ultrafast Power Rectifiers SMB/DO-214AA Features For surface mounted application Easy pick and place Glass passivated junction chip Low profile package Built-in strain relief Hideal for automated placement Ultrafast recovery time for high efficiency Low forward voltage, low power loss High temperature soldering guarateed: 260/10 seconds on terminals Meet MSL level 1, per J-STD-020D, lead free maximum peak of 260 Plastic material used carriers Underwritters Laboratory Classcification 94V-0 Epitaxial construction Green compound with suffix on packing code & prefix on datecode Mechanical Data Case: SMB/DO-214AA Molding Compound meet UL 94V-0 flammability rating Terminals: Pure tin plated, leads free, solderable per MIL-STD-750, Method 2026 Polarity: Indicated by cathode band Weight:0.097 grams Ordering Information (example) Packing code Part No. Package Packing Packing code (Green) MUR105S SMB 850 / 7 REEL R5 R5G Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. MUR MUR MUR MUR MUR MUR Symbol Units Parameter 105S 110S 115S 120S 140S 160S Maximum Repetitive Peak Reverse Voltage V 50 100 150 200 400 600 V RRM Maximum RMS Voltage V 35 70 105 140 280 420 V RMS Maximum DC Blocking Voltage V 50 100 150 200 400 600 V DC Maximum Average Forward Rectified Current I 1 A F(AV) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave I 40 35 A FSM Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage (Note 1) 1.0A T =25 V 0.875 1.25 V A F 0.710 1.05 T =150 A Maximum DC Reverse Current at Rated DC Blocking Voltage T =25 I 2 5 uA A R 50 150 uA T =150 A Maximum Reverse Recovery Time (Note 2) T 25 50 ns rr O R Typical Thermal Resistance (Note 4) 17 JL C/W O Operating Temperature Range T -55 to + 175 C J O Storage Temperature Range T -55 to + 175 STG C Note 1: Pulse Test with PW=300usec, 1% Duty Cycle Note 2: Reverse Recovery Test Condition:I =0.5A, I =1.0A, I =0.25A F R RR Version:G13RATINGS AND CHARACTERISTIC CURVES (MUR105S THRU MUR160S) FIG.1 MAXIMUM FORWARD CURRENT DERATING FIG. 2 MAXIMUM NON-REPETITIVE FORWARD CURVE SURGE CURRENT 1. 5 50 TA=25 40 1 30 20 0. 5 10 0 0 0 25 50 75 100 125 150 175 1 10 100 o LEAD TEMPERATURE ( C) NUMBER OF CYCLES AT 60 Hz FIG. 4 TYPICAL FORWARD CHARACTERISTICS FIG. 3 TYPICAL FORWARD CHARACTERISTICS 10 10 MUR140S-160S MUR105S-120S TA=150 TA=150 1 1 TA=25 TA=25 0. 1 0. 1 0 0. 2 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 1. 8 2 0 0. 2 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 1. 8 2 FORWARD VOLTAGE (V) FORWARD VOLTAGE (V) FIG. 5 TYPICAL REVERSE CHARACTERISTICS FIG. 6 TYPICAL REVERSE CHARACTERISTICS 1000 1000 MUR105S-120S MUR140S-160S 100 100 TA=150 TA=150 10 10 1 1 0. 1 0. 1 TA=25 TA=25 0. 01 0. 01 0. 001 0. 001 10 20 30 40 50 60 70 80 90 100 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE.(%) PERCENT OF RATED PEAK REVERSE VOLTAGE.(%) FIG. 7 TYPICAL JUNCTION CAPACITANCE 70 TA=25 60 50 40 30 MUR105S-120S 20 10 MUR140S-160S 0 0 4 8 12 16 20 24 REVERSE VOLTAGE (V) Version:G13 CAPACITANCE (pF) INSTANTANEOUS FORWARD INSTANTANEOUS REVERSE AVERAGE FORWARD CURRENT (A) CURRENT(A) CURRENT (uA) INSTANTANEOUS REVERSE CURRENT INSTANTANEOUS FORWARD PEAK FORWARD SURGE CURRENT (uA) CURRENT(A) (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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