0-%. Fast Switching Emitter Controlled Diode 12 5 )2 ( )- , .--EJ A 0 . 3 2 3, , 0 7 ( /)) L HHC , 6 < ( * . L < /A=NOLA *0. g8 WZNd 6 0 0 V0E m>it te r RoPUntr o llYe dTetechnology 2CD B64 F6BI - 7D CG:D49: 8 & G B6F6BC6 B64 F6BI 492B86 & G 7 BG2B5 F =D286 K A6B2D: 8 D6>A6B2DEB6 2CI A2B2==6=: 8 7SKA 4= F=CA 0 %0 )- . % 1=LFEIC )- D8 8 6 99), /) 9), /) Parameter Symbol Value Unit Repetitive peak reverse voltage V 600 V R R M Continuous forward current T = 25C I 7.3 A C F 4.9 T = 90C C Surge non repetitive forward current I 16 A F S M T = 25C, t = 10 ms, sine halfwave C p Maximum repetitive forward current I 11 A F R M T = 25C, t limited by t , D = 0.5 C p j,max Power dissipation T = 25C P 23 W C t o t 13.1 T = 90C C Operating junction temperature T - 40+ 17 5 j Storage temperature T -55...+150 s t g C Soldering temperature T 260 S 1.6mm (0.063 in.) from case for 10 s HRb + 3 *286 2+0)1)3 - 1&)2 - 0& 5 6), 3, 2)- 1 2D K E =6CC D96BG:C6 CA64:7:65 W 4=L=HANAL 6SH>JG 9=GOA 8IEN , 6A6D:D:F6 A62< B6F6BC6 F =D286 ( /)) L HHC D: EC 7 BG2B5 4EBB6 D 6 < K 0 , 8 42)g8 - 2 8 -EB86 B6A6D:D:F6 7 BG2B5 4EBB6 D */ <IC K , >C C: 6 92=7G2F6 8 2H:>E> B6A6D:D:F6 7 BG2B5 4EBB6 D ** <HC K , =:>:D65 3 I 4) . 8 WZNd M * G6B 5:CC:A2D: K +, 8 42)g8 *, * 8 &.. *0. g8 ) A6B2D: 8 2 5 CD B286 D6>A6B2DEB6 W T - =56B: 8 D6>A6B2DEB6 g8 I /(),.1 0., (/+- %& 0-%. ( % 0 , + ( 0 2% 0 )12) 1 4=L=HANAL 6SH>JG 9=GOAM 8IEN HEI NSK H=R ,D=L= NALEMNE M & & / . A(M .96B>2= B6C:CD2 46 E 4D: 42C6 % D9 - F6BC: 56F:46 * % U 6 >: 7 DAB: D & & 0. + 4> 4 =: 8 2B62 & & .) +% 20 ) + ( 0 2%0 )12) 1 2D K E =6CC D96BG:C6 CA64:7:65 W 4=L=HANAL 6SH>JG 9=GOAM 8IEN HEI NSK H=R 2 2) ( 0 2% 0 )12) 1 , 6F6BC6 =62<286 4EBB6 D i6 H ( 0 K & & .) H W ( 0 4*.)g8 & & +.) H W BG2B5 F =D286 5B A ( L < K & * . + < W 4*.)g8 & * . & < W * 6F:46 >> >> >> 6A HI * , G:D9 4>L 6 =2I6B M> D9:4< 4 AA6B 2B62 7 B 5B2: 4 64D: * :C F6BD:42= G:D9 ED 3 = G 2:B HRb + 3 *286 +)) &&