BYV410X-600 NXP

BYV410X-600 Enhanced ultrafast dual rectifier diode Rev. 01 29 June 2009 Product data sheet 1. Product profile 1.1 General description Enhanced ultrafast dual rectifier diode in a SOT186A (TO-220AB) plastic package. 1.2 Features and benefits High thermal cycling performance Soft recovery characteristic minimizes power consuming oscillations Isolated package Very low on-state losses Low thermal resistance 1.3 Applications Dual mode (DCM and CCM) PFC Power Factor Correction (PFC) for Interleaved Topology 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit I average output square-wave pulse = 0.5 --20 A O(AV) current T 42 C both diodes h conducting see Figure 1 see Figure 2 Dynamic characteristics t reverse recovery I =1A V =30V - 2035ns rr F R time dI /dt = 100 A/s F T = 25 C see Figure 5 j Q recovered charge I =1A V =30V - 1528nC r F R dI /dt = 100 A/s F Static characteristics V forward voltage I =10A T =25C -1.4 2.1 V F F j see Figure 4 I =10A T = 150 C - 1.3 1.9 V F jNXP Semiconductors BYV410X-600 Enhanced ultrafast dual rectifier diode 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A1 anode 1 mb 2 K cathode A1 A2 3 A2 anode 2 K sym125 mb n.c. mounting base isolated 1 2 3 SOT186A (TO-220F) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BYV410X-600 TO-220F plastic single-ended package isolated heatsink mounted 1 mounting SOT186A hole 3-lead TO-220full pac 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak reverse -600 V RRM voltage V crest working reverse -600 V RWM voltage V reverse voltage DC - 600 V R I average output current square-wave pulse = 0.5 T 42 C both diodes -20 A O(AV) h conducting see Figure 1 see Figure 2 I repetitive peak forward square-wave pulse = 0.5 t = 25 s T 60 C per -20 A FRM p h current diode I non-repetitive peak t = 8.3 ms sine-wave pulse T = 25 C per diode - 132 A FSM p j(init) forward current t = 10 ms sine-wave pulse T 25 C per diode - 120 A p j(init) T storage temperature -40 150 C stg T junction temperature - 150 C j BYV410X-600 1 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 29 June 2009 2 of 10