BT151-500RT NXP

BT151-500RT SCR 14 March 2014 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 (TO-220AB) plastic package intended for use in applications requiring good bidirectional blocking voltage capability, high surge current capability, high junction temperature capability and high thermal cycling performance. 2. Features and benefits Good bidirectional blocking voltage capability High junction operating temperature capability High surge current capability High thermal cycling performance Planar passivated for voltage ruggedness and reliability 3. Applications Capacitive Discharge Ignition (CDI) Crowbar protection Inrush protection Motor control Voltage regulation 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 500 V DRM state voltage V repetitive peak reverse - - 500 V RRM voltage I non-repetitive peak on- half sine wave T = 25 C - - 132 A TSM j(init) state current t = 8.3 ms p half sine wave T = 25 C - - 120 A j(init) t = 10 ms Fig. 4 Fig. 5 p T junction temperature - - 150 C j I RMS on-state current half sine wave T 133 C Fig. 1 - - 12.5 A T(RMS) mb Fig. 2 Fig. 3 Scan or click this QR code to view the latest information for this product TO-220ABNXP Semiconductors BT151-500RT SCR Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V I = 0.1 A T = 25 C Fig. 6 - 2 15 mA GT D T j 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb A K G 2 A anode sym037 3 G gate mb A mounting base connected to anode 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT151-500RT TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak off-state voltage - 500 V DRM V repetitive peak reverse voltage - 500 V RRM I average on-state current half sine wave T 133 C - 8 A T(AV) mb I RMS on-state current half sine wave T 133 C Fig. 1 - 12.5 A T(RMS) mb Fig. 2 Fig. 3 I non-repetitive peak on-state half sine wave T = 25 C - 132 A TSM j(init) current t = 8.3 ms p half sine wave T = 25 C - 120 A j(init) t = 10 ms Fig. 4 Fig. 5 p BT151-500RT All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 14 March 2014 2 / 11