X-On Electronics has gained recognition as a prominent supplier of BT151S-650L,118 SCRs across the USA, India, Europe, Australia, and various other global locations. BT151S-650L,118 SCRs are a product manufactured by NXP. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

BT151S-650L,118 NXP

BT151S-650L,118 electronic component of NXP
BT151S-650L,118 NXP
BT151S-650L,118 SCRs
BT151S-650L,118  Semiconductors

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See Product Specifications
Part No. BT151S-650L,118
Manufacturer: NXP
Category: SCRs
Description: SCRs TAPE 13-THYR AND
Datasheet: BT151S-650L,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9712 ea
Line Total: USD 0.97 
Availability - 7725
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7725
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ : 1
Multiples : 1
1 : USD 0.9712
10 : USD 0.735
25 : USD 0.6708
100 : USD 0.451
250 : USD 0.396
500 : USD 0.3454
1000 : USD 0.3168
2500 : USD 0.2992
5000 : USD 0.2992

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
On-State RMS Current - It RMS
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Minimum Operating Temperature
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
On-State Voltage
Brand
Non Repetitive On-State Current
Factory Pack Quantity :
Cnhts
Hts Code
Product Type
Subcategory
Taric
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We are delighted to provide the BT151S-650L,118 from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BT151S-650L,118 and other electronic components in the SCRs category and beyond.

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BT151S series L and R Thyristors Rev. 05 9 October 2006 Product data sheet 1. Product prole 1.1 General description Passivated thyristors in a SOT428 plastic package. 1.2 Features n High thermal cycling performance n Surface-mounted package n High bidirectional blocking voltage capability 1.3 Applications n Motor control n Static switching n Ignition circuits n Protection circuits 1.4 Quick reference data n V 500 V (BT151S-500L/R) n I 120 A (t = 10 ms) DRM TSM n V 500 V (BT151S-500L/R) n I 12 A RRM T(RMS) n V 650 V (BT151S-650L/R) n I 7.5 A DRM T(AV) n V 650 V (BT151S-650L/R) n I 5 mA (BT151S series L) RRM GT n V 800 V (BT151S-800R) n I 15 mA (BT151S series R) DRM GT n V 800 V (BT151S-800R) RRM 2. Pinning information Table 1. Pinning Pin Description Simplied outline Symbol 1 cathode (K) mb AK 2 anode (A) G 3 gate (G) sym037 mb mounting base connected to anode 2 1 3 SOT428 (DPAK)BT151S series L and R NXP Semiconductors Thyristors 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BT151S-500L DPAK plastic single-ended surface-mounted package 3 leads (one lead cropped) SOT428 BT151S-500R BT151S-650L BT151S-650R BT151S-800R 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit 1 V repetitive peak off-state voltage BT151S-500L BT151S-500R - 500 V DRM 1 BT151S-650L BT151S-650R - 650 V BT151S-800R - 800 V 1 V repetitive peak reverse voltage BT151S-500L BT151S-500R - 500 V RRM 1 BT151S-650L BT151S-650R - 650 V BT151S-800R - 800 V I average on-state current half sine wave T 103 C - 7.5 A T(AV) mb see Figure 1 I RMS on-state current all conduction angles see Figure 4 -12 A T(RMS) and 5 I non-repetitive peak on-state half sine wave T =25 C prior to TSM j current surge see Figure 2 and 3 t=10ms - 120 A t = 8.3 ms - 132 A 2 2 2 ItI t for fusing t = 10 ms - 72 A s dI /dt rate of rise of on-state current I = 20 A I =50mA -50 A/s T TM G dI /dt = 50 mA/s G I peak gate current - 2 A GM V peak reverse gate voltage - 5 V RGM P peak gate power - 5 W GM P average gate power over any 20 ms period - 0.5 W G(AV) T storage temperature - 40 +150 C stg T junction temperature - 125 C j 1 Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15A/s. BT151S SER L R 5 NXP B.V. 2006. All rights reserved. Product data sheet Rev. 05 9 October 2006 2 of 13

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI
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