X-On Electronics has gained recognition as a prominent supplier of BTA12-600CW3G Triacs across the USA, India, Europe, Australia, and various other global locations. BTA12-600CW3G Triacs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

BTA12-600CW3G ON Semiconductor

BTA12-600CW3G electronic component of ON Semiconductor
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Part No.BTA12-600CW3G
Manufacturer: ON Semiconductor
Category: Triacs
Description: Triacs 12A 35mA 600V IGT 3 QUAD INTERNL ISLTD
Datasheet: BTA12-600CW3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.629 ea
Line Total: USD 2.63 
Availability - 547
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
547
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 2.629
10 : USD 1.551
100 : USD 1.441
250 : USD 1.375
500 : USD 1.342
1000 : USD 1.21
2000 : USD 1.199

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Off-State Leakage Current Vdrm Idrm
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Product Type
Subcategory
Taric
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We are delighted to provide the BTA12-600CW3G from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BTA12-600CW3G and other electronic components in the Triacs category and beyond.

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Thyristors Surface Mount 800V > BTA12-600CW3G, BTA12-800CW3G Pb BTA12-600CW3G, BTA12-800CW3G Description Designed for high performance fullwave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking Voltage to 800 V On-State Current Rating of 12 A RMS at 25C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dV/dt 1500 V/s minimum at 125C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package High Commutating dI/dt 1.5 A/ms minimum at 125C Internally Isolated (2500 V ) RMS Pin Out These Devices are PbFree and are RoHS Compliant Functional Diagram MT 2 MT 1 G CASE 221A STYLE 4 1 2 Additional Information Samples Datasheet Resources 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/06/19Thyristors Surface Mount 800V > BTA12-600CW3G, BTA12-800CW3G Maximum Ratings (T = 25C unless otherwise noted) J Rating Symbol Value Unit Peak Repetitive Off-State Voltage (Note 1) BTA12600CW3G V , 600 DRM V (Gate Open, Sine Wave 50 to 60 Hz, T = -40 to 125C) BTA12800CW3G V 800 J RRM On-State RMS Current (Full Cycle Sine Wave, 60 Hz, T = 80C) I 12 A C T (RMS) Peak Non-Repetitive Surge Current I 105 A TSM (One Full Cycle Sine Wave, 60 Hz, T = 25C) C 2 Circuit Fusing Consideration (t = 8.3 ms) I t 46 Asec V / V DSM RSM NonRepetitive Surge Peak OffState Voltage (T = 25C, t = 10ms) V / V V J DSM RSM +100 Peak Gate Current (T = 125C, t = 20ms) I 4.0 A J GM Peak Gate Power (Pulse Width 1.0 s, T = 80C) P 20 W C G(AV) Average Gate Power (T = 125C) P 1.0 W J G(AV) Operating Junction Temperature Range T -40 to +125 C J Storage Temperature Range T -40 to +125 C stg RMS Isolation Voltage (t = 300 ms, R.H. 30%, T = 25C) V 2500 V A iso Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative DRM RRM potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit R JunctiontoCase (AC) 2.5 8JC Thermal Resistance, C/W JunctiontoAmbient 60 R 8JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for T 260 C L 10 seconds Electrical Characteristics - OFF (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit - - 0.005 Peak Repetitive Blocking Current T = 25C I , J DRM mA (V = V = V Gate Open) T = 125C I D DRM RRM J RRM - - 2.0 Electrical Characteristics - ON (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit Forward On-State Voltage (Note 2) (I = 17 A Peak) V 1.55 V TM TM MT2(+), G(+) 2.0 35 Gate Trigger Current (Continuous dc) (V = 12 V, R = 30 ) MT2(+), G() I 2.0 35 mA D L GT MT2(), G() 2.0 35 Holding Current I 45 mA H (V = 12 V, Gate Open, Initiating Current = 100 mA) D MT2(+), G(+) 50 Latching Current (V = 24 V, I = 42 mA) MT2(+), G() I 80 mA D G L MT2(), G() 50 MT2(+), G(+) 0.5 1.7 Gate Trigger Voltage (V = 12 V, R = 30 ) MT2(+), G() V 0.5 1.1 V D L GT MT2(), G() 0.5 1.1 MT2(+), G(+) 0.2 Gate NonTrigger Voltage (T = 125C) MT2(+), G() V 0.2 V J GD MT2(), G() 0.2 2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/06/19

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