Thyristors Surface Mount 600V-800V > BTA16-600BW3G, BTA16-800BW3G, Pb BTA16-600BW3G, BTA16-800BW3G, Description Designed for high performance fullwave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking Voltage to 800 V On-State Current Rating of 16 A RMS at 80C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dV/dt 1500 V/s minimum at 125C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package High Commutating dI/dt 4.0 A/ms minimum at 125C Pin Out Internally Isolated (2500 V ) RMS These Devices are PbFree Functional Diagram MT 2 MT 1 CASE 221A G STYLE 4 1 2 Additional Information Datasheet Resources Samples 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/06/19Thyristors Surface Mount 600V-800V > BTA16-600BW3G, BTA16-800BW3G, Maximum Ratings (T = 25C unless otherwise noted) J Rating Symbol Value Unit Peak Repetitive Off-State Voltage (Note 1) BTA16600BW3G V , 600 DRM V (Gate Open, Sine Wave 50 to 60 Hz, T = -40 to 125C) BTA16800BW3G V 800 J RRM On-State RMS Current (Full Cycle Sine Wave, 60 Hz, T = 80C) I 16 A C T (RMS) Peak Non-Repetitive Surge Current I 170 A TSM (One Full Cycle Sine Wave, 60 Hz, T = 25C) C 2 Circuit Fusing Consideration (t = 8.3 ms) I t 120 Asec V / V DSM RSM NonRepetitive Surge Peak OffState Voltage (T = 25C, t = 10ms) V / V V J DSM RSM +100 Peak Gate Current (T = 125C, t = 20ms) I 4.0 A J GM Peak Gate Power (Pulse Width 1.0 s, T = 80C) P 20 W C G(AV) Average Gate Power (T = 125C) P 1.0 W J G(AV) Operating Junction Temperature Range T -40 to +125 C J Storage Temperature Range T -40 to +125 C stg RMS Isolation Voltage (t = 300 ms, R.H. 30%, T = 25C) V 2500 V A iso Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative DRM RRM potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit JunctiontoCase (AC) R 2.5 JC Thermal Resistance, C/W JunctiontoAmbient R 60 JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for T 260 C L 10 seconds 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/06/19