BTA204S-800C,118 NXP

BTA204S-800C 3Q Hi-Com Triac 31 May 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a TO252 (DPAK) surface-mountable plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. Thisseries triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. 2. Features and benefits 3Q technology for improved noise immunity High blocking voltage capability High commutation capability with maximum false trigger immunity High immunity to false turn-on by dV/dt Less sensitive gate for high noise immunity Planar passivated for voltage ruggedness and reliability Surface-mountable package Triggering in three quadrants only 3. Applications General purpose motor control circuits Home appliances Rectifier-fed DC inductive loads e.g. DC motors and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 800 V DRM state voltage I RMS on-state current full sine wave T 107 C Fig. 1 - - 4 A T(RMS) mb Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 25 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 27 A j(init) t = 16.7 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ - - 35 mA GT D T T = 25 C Fig. 7 jWeEn Semiconductors BTA204S-800C 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2+ G- - - 35 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- - - 35 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - - 20 mA H D j V on-state voltage I = 5 A T = 25 C Fig. 10 - 1.4 1.7 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 125 C (V = 67% 1000 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 125 C I = 4 A 3 - - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s (snubberless com condition) gate open circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 T1 main terminal 1 T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb T2 mounting base main terminal 2 DPAK (TO252N) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA204S-800C DPAK plastic single-ended surface-mounted package (DPAK) 3 leads TO252N (one lead cropped) BTA204S-800C All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 31 May 2018 2 / 13