BTA206X-800ET:127 NXP

BTA206X-800ET 3Q Hi-Com Triac 19 September 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F)full pac plastic package. Thisseries E triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers including microcontrollers. It is used wherehigh junction operating temperatur capability (T = 150 C) is required. j 2. Features and benefits 3Q technology for improved noise immunity Direct interfacing with low power drivers and microcontrollers Good immunity to false turn-on by dV/dt High commutation capability with sensitive gate High junction operating temperature capability High voltage capability Isolated mounting base package Planar passivated for voltage ruggedness and reliability Sensitive gate for easy logic level triggering Triggering in three quadrants only 3. Applications Applications subject to high temperature Electronic thermostats (heating and cooling) Motor controls for home appliances Refrigeration and air-conditioner compressor controls 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 800 V DRM state voltage I RMS on-state current full sine wave T 114 C Fig. 1 - - 6 A T(RMS) h Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 60 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 66 A j(init) t = 16.7 ms p T junction temperature - - 150 C j Static characteristicsWeEn Semiconductors BTA206X-800ET 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit I gate trigger current V = 12 V I = 0.1 A T2+ G+ - - 10 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- - - 10 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- - - 10 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - - 15 mA H D j V on-state voltage I = 7 A Fig. 10 - 1.3 1.6 V T T Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 150 C (V = 67% 50 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 150 C I = 6 A 1 - - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s (snubberless com condition) gate open circuit V = 400 V T = 150 C I = 6 A 2 - - A/ms D j T(RMS) dV /dt = 10 V/s gate open circuit com V = 400 V T = 150 C I = 6 A 5 - - A/ms D j T(RMS) dV /dt = 1 V/s gate open circuit com 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 mb T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb n.c. mounting base isolated 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA206X-800ET TO-220F plastic single-ended package isolated heatsink mounted 1 SOT186A mounting hole 3-lead TO-220full pac BTA206X-800ET All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 19 September 2018 2 / 13