BTA208-800E NXP

BTA208-800E 3Q Hi-Com Triac Rev. 05 12 April 2011 Product data sheet 1. Product profile 1.1 General description Planar passivated high commutation three quadrant triac in a SOT78 plastic package. Thisseries triac balances the requirements of commutation performance and gate sensitivity. Thesensitive gatseries is intended for interfacing with low power drivers including microcontrollers. 1.2 Features and benefits 3Q technology for improved noise High commutation capability with immunity maximum false trigger immunity Direct interfacing with low power High voltage capability drivers and microcontrollers Planar passivated for voltage Good immunity to false turn-on by ruggedness and reliability dV/dt Triggering in three quadrants only 1.3 Applications Electronic thermostats General purpose motor controls 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak --800V DRM off-state voltage I non-repetitive peak full sine wave T =25C --65 A TSM j(init) on-state current t = 20 ms see Figure 4 p see Figure 5 I RMS on-state current full sine wave T 102 C --8 A T(RMS) mb see Figure 1 see Figure 2 see Figure 3 Static characteristics I gate trigger current V =12V I = 0.1 A T2+ G+ --10 mA GT D T T =25C see Figure 7 j V =12V I = 0.1 A T2+ G- --10 mA D T T =25C see Figure 7 j V =12V I = 0.1 A T2- G- --10 mA D T T =25C see Figure 7 j TO-220ABBTA208-800E NXP Semiconductors 3Q Hi-Com Triac 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 mb T2 T1 2 T2 main terminal 2 G 3 G gate sym051 mb T2 mounting base main terminal 2 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA208-800E TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak off-state voltage - 800 V DRM I RMS on-state current full sine wave T 102 C see Figure 1 -8 A T(RMS) mb see Figure 2 see Figure 3 I non-repetitive peak on-state full sine wave T =25C t = 20 ms -65 A TSM j(init) p current see Figure 4 see Figure 5 full sine wave T =25C t = 16.7 ms - 72 A j(init) p 2 2 2 ItI t for fusing t = 10 ms sine-wave pulse - 21 A s p dI /dt rate of rise of on-state current I =12A I = 0.2 A dI /dt = 0.2 A/s - 100 A/s T T G G I peak gate current - 2 A GM V peak gate voltage - 5 V GM P peak gate power - 5 W GM P average gate power over any 20 ms period - 0.5 W G(AV) T storage temperature -40 150 C stg T junction temperature - 125 C j BTA208-800E All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 05 12 April 2011 2 of 13