BTA204W-600D,135 NXP

BTA204W-600D 3Q Hi-Com Triac 19 September 2018 Product data sheet 1. General description Planar passivated guaranteed commutation triac in a SOT223 surface mountable plastic package for use in motor control circuits or with other highly inductive loads. This triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers, including micro controllers. 2. Features and benefits 3Q technology for improved noise immunity Direct triggering from low power drivers and logic ICs High commutation capability with sensitive gate High immunity to false turn-on by dV/dt with sensitive gate Planar passivated for voltage ruggedness and reliability Sensitive gate for easy logic level triggering Surface mountable package 3. Applications General purpose motor controls Small loads in washing machines Rectifier-fed DC inductive loads e.g. DC motors and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I RMS on-state current full sine wave T 108 C Fig. 1 - - 1 A T(RMS) sp Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 11 A TSM j(init) state current t = 16.7 ms p full sine wave T = 25 C - - 10 A j(init) t = 20 ms Fig. 4 Fig. 5 p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ - - 5 mA GT D T T = 25 C Fig. 9 j V = 12 V I = 0.1 A T2+ G- - - 5 mA D T T = 25 C Fig. 9 jWeEn Semiconductors BTA204W-600D 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2- G- - - 5 mA D T T = 25 C Fig. 9 j I holding current V = 12 V T = 25 C Fig. 11 - - 6 mA H D j V on-state voltage I = 2 A T = 25 C Fig. 12 - 1.2 1.5 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V T = 125 C (67% of 20 - - V/s D DM j voltage V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 125 C I = 1 A 5 - - A/ms com D j T(RMS) commutating current dV /dt = 0.1 V/s gate open circuit com V = 400 V T = 125 C I = 1 A 1 - - A/ms D j T(RMS) dV /dt = 20 V/s (snubberless com condition) gate open circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 4 T2 T1 G 2 T2 main terminal 2 sym051 3 G gate 1 2 3 4 mb mounting base connected to SC-73 (SOT223) T2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA204W-600D SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads BTA204W-600D All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 19 September 2018 2 / 14