X-On Electronics has gained recognition as a prominent supplier of BTA2008-600E,412 Triacs across the USA, India, Europe, Australia, and various other global locations. BTA2008-600E,412 Triacs are a product manufactured by NXP. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

BTA2008-600E,412 NXP

BTA2008-600E,412 electronic component of NXP
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Part No.BTA2008-600E,412
Manufacturer: NXP
Category: Triacs
Description: Triacs Thyristor TRIAC 600V 9.9A 3-Pin SPT
Datasheet: BTA2008-600E,412 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10000: USD 0.1661 ea
Line Total: USD 1661 
Availability - 0
MOQ: 10000  Multiples: 10000
Pack Size: 10000
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.472
10 : USD 0.4046
100 : USD 0.3017

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 10000
Multiples : 10000
10000 : USD 0.1661
25000 : USD 0.1628
50000 : USD 0.1595

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Mounting Style
Packaging
Off-State Leakage Current Vdrm Idrm
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BTA2008-600E,412 from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BTA2008-600E,412 and other electronic components in the Triacs category and beyond.

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BTA2008-600E 3Q Hi-Com Triac 28 September 2016 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT54 (TO-92) plastic package. Thisseries triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers and logic ICs including microcontrollers. 2. Features and benefits 3Q technology for improved noise immunity Direct gate triggering from low power drivers and logic ICs High commutation capability with sensitive gate High voltage capability Planar passivated for voltage ruggedness and reliability Sensitive gate for easy logic level triggering Triggering in three quadrants only 3. Applications Low power motor controls Small inductive loads e.g. solenoids, door locks, water valves Small loads in large white goods 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I RMS on-state current full sine wave T 70 C Fig. 1 - - 0.8 A T(RMS) lead Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 9 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 9.9 A j(init) t = 16.7 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ 0.5 - 10 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- 0.5 - 10 mA D T T = 25 C Fig. 7 jWeEn Semiconductors BTA2008-600E 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2- G- 0.5 - 10 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - - 12 mA H D j V on-state voltage I = 0.85 A T = 25 C Fig. 10 - 1.35 1.6 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V T = 125 C (V = 67% 600 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 125 C 1.6 - - A/ms com D j commutating current I = 0.8 A dV /dt = 10 V/s T(RMS) com gate open circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T2 main terminal 2 T2 T1 G 2 G gate sym051 3 T1 main terminal 1 3 2 1 TO-92 (SOT54) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA2008-600E TO-92 plastic single-ended leaded (through hole) package 3 leads SOT54 BTA2008-600E All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet 28 September 2016 2 / 13

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI
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