BTA201-800E NXP

BTA201 series B, E and ER 1 A Three-quadrant triacs high commutation Rev. 04 4 February 2008 Product data sheet 1. Product prole 1.1 General description Passivated, guaranteed commutation triacs in a plastic package. The sensitive gate E and ER series are intended for interfacing with low power drivers, including microcontrollers. The high commutation B series are designed to commutate the full RMS current at the maximum junction temperature without the aid of a snubber. 1.2 Features n Suitable for interfacing with low power n Reverse pinning option (ER type) drivers, including microcontrollers 1.3 Applications n Motor controls n Solenoid drivers 1.4 Quick reference data n I 12.5 A n I 50 mA (BTA201-600B/800B) TSM GT n I 1A n I 10 mA (BTA201-600E/800E/ER) T(RMS) GT n V 600 V (BTA201-600B/E) n I 5 mA (BTA201-600B/800B) DRM GT n V 800 V (BTA201-800B/E/ER) n I 1 mA (BTA201-600E/800E/ER) DRM GT 2. Pinning information Table 1. Pinning Pin Description Simplied outline Graphic symbol B and E series 1 main terminal 2 (T2) T2 T1 2 gate (G) G 3 main terminal 1 (T1) sym051 ER series 1 main terminal 1 (T1) 3 2 1 2 gate (G) SOT54 (TO-92) 3 main terminal 2 (T2)BTA201 series B, E and ER NXP Semiconductors 1 A Three-quadrant triacs high commutation 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BTA201-600B TO-92 plastic single-ended leaded (through hole) package 3 leads SOT54 BTA201-600E BTA201-800B BTA201-800E BTA201-800ER 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak off-state voltage DRM 1 BTA201-600B - 600 V 1 BTA201-600E - 600 V BTA201-800B - 800 V BTA201-800E - 800 V BTA201-800ER - 800 V I RMS on-state current full sine wave T 54.3 C see -1 A T(RMS) lead Figure 4 and 5 I non-repetitive peak on-state current full sine wave T =25 C prior to TSM j surge see Figure 2 and 3 t = 20 ms - 12.5 A t = 16.7 ms - 13.7 A 2 2 2 ItI t for fusing t = 10 ms - 0.78 A s p dI /dt rate of rise of on-state current I = 1.5 A I = 0.2 A - 100 A/s T TM G dI /dt = 0.2 A/s G I peak gate current - 2 A GM P peak gate power - 5 W GM P average gate power over any 20 ms period - 0.1 W G(AV) T storage temperature - 40 +150 C stg T junction temperature - 125 C j 1 Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 6 A/s. BTA201 SER B E ER 4 NXP B.V. 2008. All rights reserved. Product data sheet Rev. 04 4 February 2008 2 of 12