BTA201W-800E,115 NXP

BTA201W-800E 3Q Hi-Com triac 15 June 2016 Product data sheet 1. General description Planar passivated high commutation triac in a SOT223 surface mounted plastic package. Thisseries triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers and logic ICs including microcontrollers. 2. Features and benefits 3Q technology for improved noise immunity Direct triggering from low power drivers and logic ICs High commutation capability with sensitive gate High immunity to false turn-on by dV/dt High voltage capability Planar passivated for voltage ruggedness and reliability Sensitive gate for easy logic level triggering Surface mountable package Triggering in three quadrants only 3. Applications General purpose motor control Small loads in washing machines Solenoid drivers 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 800 V DRM state voltage I RMS on-state current full sine wave T 106 C Fig. 1 - - 1 A T(RMS) sp Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 13.7 A TSM j(init) state current t = 16.7 ms p full sine wave T = 25 C - - 12.5 A j(init) t = 20 ms Fig. 4 Fig. 5 p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ 1 - 10 mA GT D T T = 25 C Fig. 9 jWeEn Semiconductors BTA201W-800E 3Q Hi-Com triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2+ G- 1 - 10 mA D T T = 25 C Fig. 9 j V = 12 V I = 0.1 A T2- G- 1 - 10 mA D T T = 25 C Fig. 9 j I holding current V = 12 V T = 25 C Fig. 11 - - 12 mA H D j V on-state voltage I = 1.4 A T = 25 C Fig. 12 - 1.3 1.5 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 125 C (V = 67% 600 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit Fig. 14 dI /dt rate of change of V = 400 V T = 125 C I = 1 A 2.5 - - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s (snubberless com condition) gate open circuit V = 400 V T = 125 C I = 1 A 3.5 - - A/ms D j T(RMS) dV /dt = 10 V/s gate open circuit com 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 4 T2 T1 G 2 T2 main terminal 2 sym051 3 G gate 1 2 3 4 T2 main terminal 2 SC-73 (SOT223) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA201W-800E SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads BTA201W-800E All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet 15 June 2016 2 / 16