BTA316X-600E NXP

BTA316X series B, C and E 16 A Three-quadrant triacs high commutation Rev. 01 11 April 2007 Product data sheet 1. Product prole 1.1 General description Passivated, new generation, high commutation triacs in a SOT186A isolated full pack plastic package 1.2 Features n Very high commutation performance n High immunity to dV/dt maximized at each gate sensitivity n High isolation voltage n Wide range of gate sensitivities 1.3 Applications n High power motor control - e.g. washing n Refrigeration and air conditioning machines and vacuum cleaners compressors n Non-linear rectier-fed motor loads n Electronic thermostats 1.4 Quick reference data n V 600 V (BTA316X-600B/C/E) n I 50 mA (BTA316X series B) DRM GT n V 800 V (BTA316X-800B/C/E) n I 35 mA (BTA316X series C) DRM GT n I 140 A (t = 20 ms) n I 10 mA (BTA316X series E) TSM GT n I 16 A T(RMS) 2. Pinning information Table 1. Pinning Pin Description Simplied outline Symbol 1 main terminal 1 (T1) mb T2 T1 2 main terminal 2 (T2) G 3 gate (G) sym051 mb mounting base isolated 1 2 3 SOT186A (TO-220F)BTA316X series B, C and E NXP Semiconductors 16 A Three-quadrant triacs high commutation 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BTA316X-600B TO-220F plastic single-ended package isolated heatsink mounted 1 mounting hole SOT186A 3-lead TO-220 full pack BTA316X-600C BTA316X-600E BTA316X-800B BTA316X-800C BTA316X-800E 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit 1 V repetitive peak off-state voltage BTA316X-600B BTA316X-600C - 600 V DRM BTA316X-600E BTA316X-800B BTA316X-800C - 800 V BTA316X-800E I RMS on-state current full sine wave T 45 C see -16 A T(RMS) h Figure 4 and 5 I non-repetitive peak on-state current full sine wave T =25 C prior to TSM j surge see Figure 2 and 3 t = 20 ms - 140 A t = 16.7 ms - 150 A 2 2 2 ItI t for fusing t = 10 ms - 98 A s dI /dt rate of rise of on-state current I = 20 A I = 0.2 A - 100 A/s T TM G dI /dt = 0.2 A/s G I peak gate current - 2 A GM P peak gate power - 5 W GM P average gate power over any 20 ms period - 0.5 W G(AV) T storage temperature - 40 +150 C stg T junction temperature - 125 C j 1 Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/s. BTA316X SER B C E 1 NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 11 April 2007 2 of 13