BTA30-800CW3G ON Semiconductor

Thyristors Surface Mount 600V > BTA30-600CW3G BTA30-600CW3G Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking Voltage to 600 V On-State Current Rating of 30 A RMS at 95C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dV/dt 500 V/s minimum at 125C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package High Commutating dI/dt 4.0 A/ms minimum at 125C Pin Out Internally Isolated (2500 V ) RMS These are PbFree Devices Functional Diagram MT 2 MT 1 G CASE 221A STYLE 4 1 2 Additional Information Samples Datasheet Resources ESW490-30 10/29/2018 Q6030LH5TP 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/18/19Thyristors Surface Mount 600V > BTA30-600CW3G Maximum Ratings (T = 25C unless otherwise noted) J Rating Symbol Value Unit Peak Repetitive Off-State Voltage (Note 1) V , DRM V V (Gate Open, Sine Wave 50 to 60 Hz, T = -40 to 150C) RRM J 600 BTA30600CW3G On-State RMS Current (Full Cycle Sine Wave, 60 Hz, T = 95C) I 30 A C T (RMS) Peak Non-Repetitive Surge Current I 400 A TSM (One Full Cycle Sine Wave, 60 Hz, T = 25C) J (initial) 2 Circuit Fusing Consideration (t = 8.3 ms) I t 667 Asec NonRepetitive Surge Peak OffState Voltage V / V V / V V DSM RSM DSM RSM (T = 25C, t = 8.3 ms) +100 J Peak Gate Current (T = 125C, t 20s) I 4.0 W J GM Average Gate Power (T = 125C) P 0.5 W J G(AV) Operating Junction Temperature Range T -40 to +125 C J Storage Temperature Range T -40 to +125 C stg RMS Isolation Voltage (t = 300 ms, R.H. 30%, T = 25C) V 2500 V iso A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative DRM RRM potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, JunctiontoCase (AC) 1.8 R JC C/W R JA JunctiontoAmbient 60 Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 260 C T L 10 seconds 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/18/19