BTA312Y-600C NXP

BTA312Y series C 12 A Three-quadrant triacs high commutation insulated Rev. 01 27 September 2007 Product data sheet 1. Product prole 1.1 General description Passivated, new generation, high commutation triacs in an internally insulated TO-220 plastic package 1.2 Features n Very high commutation performance n High immunity to dV/dt n Isolated mounting base n 2500 V RMS isolation voltage 1.3 Applications n Motor control - e.g. washing machines n Non-linear rectier-fed motor loads n Refrigeration compressors n Lamp dimmers for US market 1.4 Quick reference data n V 600 V (BTA312Y-600C) n I 12 A DRM T(RMS) n V 800 V (BTA312Y-800C) n I 100 A (t = 20 ms) DRM TSM n I 35 mA n I 110 A (t = 16.7 ms) GT TSM 2. Pinning information Table 1. Pinning Pin Description Simplied outline Symbol 1 main terminal 1 (T1) mb T2 T1 2 main terminal 2 (T2) G 3 gate (G) sym051 mb mounting base isolated 12 3 SOT78D (TO-220)BTA312Y series C NXP Semiconductors 12 A Three-quadrant triacs high commutation insulated 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BTA312Y-600C TO-220 plastic single-ended package isolated heatsink mounted 1 mounting hole SOT78D 3-lead TO-220 BTA312Y-800C 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit 1 V repetitive peak off-state voltage BTA312Y-600C - 600 V DRM BTA312Y-800C - 800 V I RMS on-state current full sine wave T 85 C see -12 A T(RMS) mb Figure 4 and 5 I non-repetitive peak on-state current full sine wave T =25 C prior to TSM j surge see Figure 2 and 3 t = 20 ms - 100 A t = 16.7 ms - 110 A 2 2 2 ItI t for fusing t = 10 ms - 50 A s dI /dt rate of rise of on-state current I = 20 A I = 0.2 A - 100 A/s T TM G dI /dt = 0.2 A/s G I peak gate current - 2 A GM P peak gate power - 5 W GM P average gate power over any 20 ms period - 0.5 W G(AV) T storage temperature - 40 +150 C stg T junction temperature - 125 C j 1 Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/s. BTA312Y SER C 1 NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 27 September 2007 2 of 12