BTA316-600ET,127 NXP

BTA316-600ET 3Q Hi-Com Triac 12 September 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT78 plastic package. Theseries E triac balances the requirements of commutation performance and gate sensitivity. Thesensitive gatseries E is intended for interfacing with low power drivers including microcontrollers wherehigh junction operating temperatur capability is required. 2. Features and benefits 3Q technology for improved noise immunity Direct interfacing with low power drivers and microcontrollers Good immunity to false turn-on by dV/dt High commutation capability with sensitive gate High junction operating temperature capability High voltage capability Planar passivated for voltage ruggedness and reliability Triggering in three quadrants only 3. Applications Applications subject to high temperature Electronic thermostats (heating and cooling) High power motor controls e.g. washing machines and vacuum cleaners Refrigeration and air-conditioner compressor controls 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I RMS on-state current full sine wave T 126 C Fig. 1 - - 16 A T(RMS) mb Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 140 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 150 A j(init) t = 16.7 ms p T junction temperature - - 150 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ 2 - 10 mA GT D T T = 25 C Fig. 7 jWeEn Semiconductors BTA316-600ET 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2+ G- 2 - 10 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- 2 - 10 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - - 15 mA H D j V on-state voltage I = 18 A T = 25 C Fig. 10 - 1.3 1.5 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V T = 150 C (V = 67% 20 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 150 C I = 16 A 0.8 - - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s (snubberless com condition) gate open circuit V = 400 V T = 150 C I = 16 A 1.2 - - A/ms D j T(RMS) dV /dt = 10 V/s gate open circuit com V = 400 V T = 150 C I = 16 A 6 - - A/ms D j T(RMS) dV /dt = 1 V/s gate open circuit com 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 mb T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb T2 mounting base main terminal 2 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA316-600ET TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB BTA316-600ET/DG TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB BTA316-600ET All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 12 September 2018 2 / 14