BTA316-800E,127 NXP

BTA316 series D and E 16 A Three-quadrant triacs high commutation Rev. 01 18 April 2007 Product data sheet 1. Product prole 1.1 General description Passivated, new generation, high commutation triacs in a SOT78 plastic package 1.2 Features n Sensitive gate n High immunity to dV/dt n Very high commutation performance maximized at each gate sensitivity 1.3 Applications n High power motor control - e.g. washing n Refrigeration and air conditioning machines and vacuum cleaners compressors n Electronic thermostats 1.4 Quick reference data n V 600 V (BTA316-600D/E) n I 10 mA (BTA316 series E) DRM GT n V 800 V (BTA316-800E) n I 5 mA (BTA316-600D) DRM GT n I 140 A (t = 20 ms) n I 16 A TSM T(RMS) 2. Pinning information Table 1. Pinning Pin Description Simplied outline Symbol 1 main terminal 1 (T1) mb T2 T1 2 main terminal 2 (T2) G 3 gate (G) sym051 mb mounting base main terminal 2 (T2) 12 3 SOT78 (TO-220AB)BTA316 series D and E NXP Semiconductors 16 A Three-quadrant triacs high commutation 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BTA316-600D SC-46 plastic single-ended package heatsink mounted 1 mounting hole 3-lead SOT78 TO-220AB BTA316-600E BTA316-800E 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit 1 V repetitive peak off-state voltage BTA316-600D BTA316-600E - 600 V DRM BTA316-800E - 800 V I RMS on-state current full sine wave T 101 C see -16 A T(RMS) mb Figure 4 and 5 I non-repetitive peak on-state current full sine wave T =25 C prior to TSM j surge see Figure 2 and 3 t = 20 ms - 140 A t = 16.7 ms - 150 A 2 2 2 ItI t for fusing t = 10 ms - 98 A s dI /dt rate of rise of on-state current I = 20 A I = 0.2 A - 100 A/s T TM G dI /dt = 0.2 A/s G I peak gate current - 2 A GM P peak gate power - 5 W GM P average gate power over any 20 ms period - 0.5 W G(AV) T storage temperature - 40 +150 C stg T junction temperature - 125 C j 1 Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/s. BTA316 SER D E 1 NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 18 April 2007 2 of 12