BTA312B-600CT,118 NXP

BTA312B-600CT 3Q Hi-Com Triac 19 September 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT404 (D2PAK) surface mountable plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. Thisseries C triac will commutate the full RMS current at maximum rated junction temperature (T = 150 C) without the aid of a snubber. It is used in applications wherehigh j junction operating temperature capabilit is required. 2. Features and benefits 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High junction operating temperature capability High voltage capability Less sensitive gate for high noise immunity Planar passivated for voltage ruggedness and reliability Surface mountable package Triggering in three quadrants only Very high immunity to false turn-on by dV/dt 3. Applications Applications subject to high temperature Electronic thermostats (heating and cooling) High power motor controls e.g. washing machines and vacuum cleaners Rectifier-fed DC inductive loads e.g. DC motors and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I RMS on-state current full sine wave T 125 C Fig. 1 - - 12 A T(RMS) mb Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 100 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 110 A j(init) t = 16.7 ms p T junction temperature - - 150 C j Static characteristicsWeEn Semiconductors BTA312B-600CT 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit I gate trigger current V = 12 V I = 0.1 A T2+ G+ 2 - 35 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- 2 - 35 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- 2 - 35 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - - 35 mA H D j V on-state voltage I = 15 A T = 25 C Fig. 10 - 1.3 1.6 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V T = 150 C (V = 67% 300 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 150 C I = 12 A 8 - - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s (snubberless com condition) gate open circuit V = 400 V T = 150 C I = 12 A 13 - - A/ms D j T(RMS) dV /dt = 10 V/s gate open circuit com V = 400 V T = 150 C I = 12 A 20 - - A/ms D j T(RMS) dV /dt = 1 V/s gate open circuit com 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 T1 main terminal 1 T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb T2 mounting base main 2 terminal 2 1 3 D2PAK (SOT404) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA312B-600CT D2PAK plastic single-ended surface-mounted package (D2PAK) 3 SOT404 leads (one lead cropped) BTA312B-600CT All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 19 September 2018 2 / 13