BTA312X-600D,127 NXP

BTA312X-600D 3Q Hi-Com Triac 19 September 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F)full pac plastic package. Theseries triac balances the requirements of commutation performance and gate sensitivity. Thisvery sensitive gatseries is intended for interfacing with low power drivers including microcontrollers. 2. Features and benefits 3Q technology for improved noise immunity Direct interfacing with low power drivers and microcontrollers Good immunity to false turn-on by dV/dt High commutation capability with very sensitive gate High voltage capability Isolated mounting base package Planar technology for voltage ruggedness and reliability Very sensitive gate for easy logic level triggering 3. Applications Electronic thermostats (heating and cooling) High power motor controls e.g. washing machines and vacuum cleaners 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I RMS on-state current full sine wave T 59 C Fig. 1 - - 12 A T(RMS) h Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 100 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 110 A j(init) t = 16.7 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ - - 5 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- - - 5 mA D T T = 25 C Fig. 7 jWeEn Semiconductors BTA312X-600D 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2- G- - - 5 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - - 10 mA H D j V on-state voltage I = 15 A T = 25 C Fig. 10 - 1.3 1.6 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V T = 125 C (V = 67% 20 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 125 C I = 12 A 1 - - A/ms com D j T(RMS) commutating current dV /dt = 20 V/s (snubberless com condition) gate open circuit V = 400 V T = 125 C I = 12 A 1.5 - - A/ms D j T(RMS) dV /dt = 10 V/s gate open circuit com V = 400 V T = 125 C I = 12 A 4.5 - - A/ms D j T(RMS) dV /dt = 1 V/s gate open circuit com 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 mb T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb n.c. mounting base isolated 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BTA312X-600D TO-220F plastic single-ended package isolated heatsink mounted 1 SOT186A mounting hole 3-lead TO-220full pac BTA312X-600D All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 19 September 2018 2 / 13