BTA312B-800E,118 NXP

BTA312B-800E 3Q Hi-Com Triac Rev.02 - 19 April 2019 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a TO263 (D2PAK) surface mountable plastic package. Thisseries triac balances the requirements of commutation performance and gate sensitivity. Thesensitive gatseries is intended for interfacing with low power drivers including microcontrollers. 2. Features and benefits 3Q technology for improved noise immunity Direct interfacing with low power drivers and microcontrollers Good immunity to false turn-on by dV/dt High commutation capability with sensitive gate High voltage capability Planar passivated for voltage ruggedness and reliability Sensitive gate for easy logic level triggering Surface mountable package Triggering in three quadrants only 3. Applications Electronic thermostats (heating and cooling) High power motor controls e.g. washing machines and vacuum cleaners 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off-state - - 800 V DRM voltage I RMS on-state current full sine wave T 100 C - - 12 A T(RMS) mb Fig. 1 Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C t = 20 ms - - 100 A TSM j(init) p state current Fig 4 Fig 5 full sine wave T = 25 C t = 16.7 ms - - 110 A j(init) p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ 2 - 10 mA GT D T T = 25 C Fig. 7 jWeEn Semiconductors BTA312B-800E 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2+ G- 2 - 10 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- 2 - 10 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - - 15 mA H D j V on-state voltage I = 15 A T = 25 C Fig. 10 - 1.3 1.6 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 536 V T = 125 C (V = 67% 50 - - V/s D DM j DM voltage of V ) exponential waveform gate DRM open circuit dI /dt rate of change of V = 400 V T = 125 C I = 12 A 3 - - A/ms com D j T(RMS) commutating curren dV /dt = 20 V/s (snubberless com condition) gate open circuit V = 400 V T = 125 C I = 12 A 6 - - A/ms D j T(RMS) dV /dt = 10 V/s gate open circuit com V = 400 V T = 125 C I = 12 A 10 - - A/ms D j T(RMS) dV /dt = 1 V/s gate open circuit com 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 T2 T1 2 T2 main terminal 2 G sym051 3 G gate mb T2 mounting base main terminal 2 2 1 3 6. Ordering information Table 3. Ordering information Type number Package Orderable part number Packing Small packing Package Package Name method quantity version issue date BTA312B-800E TO263 BTA312B-800EJ Reel 800 TO263E 26-May-2017 BTA312B-800E All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2019. All rights reserved Product data sheet 19 April 2019 2 / 13