Thyristors Datasheet BTB08-600CW3G, BTB08-800CW3G Surface Mount 600 - 800V Pb Description The BTB08 is designed for high performance full-wave AC control applications where high noise immunity and high commutating di/ dt are required. Features Blocking Voltage to 800 V Minimizes Snubber Networks for Protection On-State Current Rating of 8 A RMS at 80C Industry Standard TO-220AB Package Uniform Gate Trigger Currents in Three Quadrants High Commutating dI/dt 3.0 A/ms minimum at 125C High Immunity to dV/dt 1500 V/s minimum at 125C These Devices are PbFree Additional Information Functional Diagram MT 2 MT 1 G Pin Out Resources Accessories Samples CASE 221A STYLE 4 1 2 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: GD. 02/15/21Thyristors Datasheet BTB08-600CW3G, BTB08-800CW3G Surface Mount 600 - 800V Maximum Ratings (TJ = 25C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off-State Voltage (Note 1) BTB08600CW3G V , 600 DRM V (T = -40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) BTB08800CW3G V 800 J RRM On-State RMS Current (Full Cycle Sine Wave, 60 Hz, T = 80C) I 8.0 A C T (RMS) Peak NonRepetitive Surge Current I 90 A TSM (One Full Cycle Sine Wave, 60 Hz,T = 25C) C 2 Circuit Fusing Considerations (t = 10 ms) I t 36 Asec NonRepetitive Surge Peak OffState Voltage (T = 25C, t = 10ms) V / V V / V +100 V J DSM RSM DSM RSM Peak Gate Current (T = 125C, t = 20ms) I 4.0 A J GM Peak Gate Power (Pulse Width 1.0 s, T = 80C) P 20 W C GM Average Gate Power (T = 125C) P 1.0 W J G(AV) Operating Junction Temperature Range T -40 to +125 C J Storage Temperature Range T -40 to +125 C stg Indicates JEDEC Registered Data Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Maximum Ratings (TJ = 25C unless otherwise noted) Rating Symbol Value Unit JunctiontoCase (AC) R 2.5 JC Thermal Resistance, C/W JunctiontoAmbient R 60 JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds T 260 C L Indicates JEDEC Registered Data Electrical Characteristics - OFF (TJ = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Peak Repetitive Blocking Current T = 25C I , - - 0.005 J DRM mA (V = V = V Gate Open) T = 110C I - - 1.0 D DRM RRM J RRM Electrical Characteristics - ON Characteristic Symbol Min Typ Max Unit Peak On-State Voltage (Note 2) (I = 11 A Peak) V 1.55 V TM TM MT2(+), G(+) 2.5 35 Gate Trigger Current (Continuous dc) (V = 12 V, R = 30 ) MT2(+), G() I 2.5 35 mA D L GT MT2(), G() 2.5 35 Holding Current (VD = 12 V, Gate Open, Initiating Current = 100 mA) I 45 mA H MT2(+), G(+) 50 Latching Current (V = 24 V, I = 42 mA) MT2(+), G() I 80 mA D G L MT2(), G() 50 MT2(+), G(+) 0.5 1.7 Gate Trigger Voltage (V = 12 V, R = 30 ) MT2(+), G() V 0.5 1.1 V D L GT MT2(), G() 0.5 1.1 MT2(+), G(+) 0.2 Gate NonTrigger Voltage (T = 125C) MT2(+), G() V 0.2 V J GD MT2(), G() 0.2 2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. 2021 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revised: GD. 02/15/21