X-On Electronics has gained recognition as a prominent supplier of BTB16-600CW3G Triacs across the USA, India, Europe, Australia, and various other global locations. BTB16-600CW3G Triacs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

BTB16-600CW3G ON Semiconductor

BTB16-600CW3G electronic component of ON Semiconductor
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Part No.BTB16-600CW3G
Manufacturer: ON Semiconductor
Category: Triacs
Description: Triacs 16A 35mA 600V IGT 3 QUAD
Datasheet: BTB16-600CW3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8657 ea
Line Total: USD 0.87 
Availability - 97
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
97
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8657
500 : USD 0.7535
1000 : USD 0.7535

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Breakover Current Ibo Max
Off-State Leakage Current Vdrm Idrm
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Product Type
Subcategory
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We are delighted to provide the BTB16-600CW3G from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BTB16-600CW3G and other electronic components in the Triacs category and beyond.

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Thyristors Surface Mount 800V > BTB16-600BW3G, BTB16-800BW3G Pb BTB16-600CW3G, BTB16-800CW3G Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking Voltage to 800 V On-State Current Rating of 16 Amperes RMS at 25C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dV/dt 1000 V/s minimum at 125C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package High Commutating dI/dt 8.5 A/ms minimum at 125C Pin Out These are PbFree Devices Functional Diagram MT2 MT1 G CASE 221A STYLE 4 1 2 Additional Information Samples Datasheet Resources 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17Thyristors Surface Mount 800V > BTB16-600BW3G, BTB16-800BW3G Maximum Ratings (T = 25C unless otherwise noted) J Rating Symbol Value Unit Peak Repetitive Off-State Voltage (Note 1) V , DRM (Gate Open, Sine Wave 50 to 60 Hz, T = -40 to 125C) J V V RRM 600 BTB16600CW3G 800 BTB16800CW3G On-State RMS Current (Full Cycle Sine Wave, 60 Hz, T = 80C) I 16 A C T (RMS) Peak Non-Repetitive Surge Current I 170 A TSM (One Full Cycle Sine Wave, 60 Hz, T = 25C) C 2 Circuit Fusing Consideration (t = 8.3 ms) I t 144 Asec NonRepetitive Surge Peak OffState Voltage V / V V / V V DSM RSM DSM RSM (T = 25C, t = 10 ms) +100 J Peak Gate Current (T = 125C, t = 20ms) I 4.0 W J GM Peak Gate Power (Pulse Width 1.0 s, T = 80C) P 20 W C GM Average Gate Power (T = 125C) P 1.0 W J G(AV) Operating Junction Temperature Range T -40 to +125 C J Storage Temperature Range T -40 to +125 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative DRM RRM potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit R Thermal Resistance, JunctiontoCase (AC) 1.9 8JC C/W JunctiontoAmbient 60 R 8JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 260 C T L 10 seconds 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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