BUH100G SWITCHMODE NPN Silicon Planar Power Transistor The BUH100G has an application specific stateofart die designed for use in 100 W Halogen electronic transformers. This power transistor is specifically designed to sustain the large BUH100G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V 400 460 Vdc CEO(sus) (I = 100 mA, L = 25 mH) C CollectorBase Breakdown Voltage V 700 860 Vdc CBO (I = 1 mA) CBO EmitterBase Breakdown Voltage V 10 12.5 Vdc EBO (I = 1 mA) EBO Collector Cutoff Current I 100 Adc CEO (V = Rated V , I = 0) CE CEO B Collector Cutoff Current T = 25C I 100 Adc C CES (V = Rated V , V = 0) T = 125C 1000 CE CES EB C Collector Base Current T = 25C I 100 Adc C CBO (V = Rated V , V = 0) T = 125C 1000 CB CBO EB C EmitterCutoff Current I 100 Adc EBO (V = 9 Vdc, I = 0) EB C ON CHARACTERISTICS BaseEmitter Saturation Voltage T = 25C V 1 1.1 Vdc C BE(sat) (I = 5 Adc, I = 1 Adc) C B CollectorEmitter Saturation Voltage T = 25C V 0.37 0.6 Vdc CE(sat) C (I = 5 Adc, I = 1 Adc) T = 125C 0.37 0.6 C B C (I = 7 Adc, I = 1.5 Adc) T = 25C 0.5 0.75 Vdc C B C T = 125C 0.6 1.5 C DC Current Gain(I = 1 Adc, V = 5 Vdc) T = 25C h 15 24 C CE C FE T = 125C 16 28 C (I = 5 Adc, V = 5 Vdc) T = 25C 10 15 C CE C T = 125C10 14.5 C (I = 7 Adc, V = 5 Vdc) T = 25C 8 12 C CE C T = 125C 7 10.5 C (I = 10 Adc, V = 5 Vdc) T = 25C 6 9.5 C CE C T = 125C4 8 C DYNAMIC SATURATION VOLTAGE T = 25C V 1.1 V C CE(dsat) I = 5 Adc, I = 1 Adc Dynamic Saturation C B1 V = 300 V Voltage: Determined 3 s CC T = 125C 2.1 V C after rising I reaches B1 T = 25C 1.7 V 90% of final I C B1 I = 7.5 Adc, I = 1.5 Adc C B1 (See Figure 19) V = 300 V CC T = 125C 5 V C DYNAMIC CHARACTERISTICS Current Gain Bandwidth f 23 MHz T (I = 1 Adc, V = 10 Vdc, f = 1 MHz) C CE Output Capacitance C 100 150 pF ob (V = 10 Vdc, I = 0, f = 1 MHz) CB E Input Capacitance C 1300 1750 pF ib (V = 8 Vdc, f = 1 MHz) EB