BUB323ZT4G ON Semiconductor

BUB323Z NPN Silicon Power Darlington High Voltage Autoprotected 2 D PAK for Surface Mount BUB323Z ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (Note 1) CollectorEmitter Clamping Voltage (I = 7.0 A) V 350 450 Vdc C CLAMP (T = 40C to +125C) C CollectorEmitter Cutoff Current I 100 Adc CEO (V = 200 V, I = 0) CE B EmitterBase Leakage Current I 50 mAdc EBO (V = 6.0 Vdc, I = 0) EB C ON CHARACTERISTICS (Note 1) BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 8.0 Adc, I = 100 mAdc) 2.2 C B (I = 10 Adc, I = 0.25 Adc) 2.5 C B CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 7.0 Adc, I = 70 mAdc) 1.6 C B (T = 125C) 1.8 C (I = 8.0 Adc, I = 0.1 Adc) 1.8 C B (T = 125C) 2.1 C (I = 10 Adc, I = 0.25 Adc) 1.7 C B BaseEmitter On Voltage V Vdc BE(on) (I = 5.0 Adc, V = 2.0 Vdc) (T = 40C to +125C) 1.1 2.1 C CE C (I = 8.0 Adc, V = 2.0 Vdc) 1.3 2.3 C CE Diode Forward Voltage Drop V 2.5 Vdc F (I = 10 Adc) F DC Current Gain h FE (I = 6.5 Adc, V = 1.5 Vdc) (T = 40C to +125C) 150 C CE C (I = 5.0 Adc, V = 4.6 Vdc) 500 3400 C CE DYNAMIC CHARACTERISTICS Current Gain Bandwidth f 2.0 MHz T (I = 0.2 Adc, V = 10 Vdc, f = 1.0 MHz) C CE Output Capacitance C 200 pF ob (V = 10 Vdc, I = 0, f = 1.0 MHz) CB E Input Capacitance C 550 pF ib (V = 6.0 V) EB CLAMPING ENERGY (See Notes) Repetitive NonDestructive Energy Dissipated at turnoff: W 200 mJ CLAMP (I = 7.0 A, L = 8.0 mH, R = 100 ) (see Figures 2 and 4) C BE SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH) Fall Time t 625 ns fi (I = 6.5 A, I = 45 mA, C B1 Storage Time V = 0, R = 0, t 10 30 s BE(off) BE(off) si V = 14 V, V = 300 V) CC Z Crossover Time t 1.7 s c Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%.